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AM29PDS322D 数据表(PDF) 37 Page - Advanced Micro Devices

部件名 AM29PDS322D
功能描述  32 Megabit (2 M x 16-Bit) CMOS 1.8 Volt-only (1.8 V to 2.2 V) Simultaneous Read/Write Page-Mode Boot Sector Flash Memory
PDF  51 Pages
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制造商  AMD [Advanced Micro Devices]
网页  http://www.amd.com
标志 AMD - Advanced Micro Devices

AM29PDS322D 数据表(HTML) 37 Page - Advanced Micro Devices

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December 4, 2006 23569A5
Am29PDS322D
35
D A TA
SH EET
AC CHARACTERISTICS
Read-Only Operations
Notes:
1. Not 100% tested.
2. See Figure 13 and Table 12 for test specifications.
3. Measurements performed by placing a 50
Ω termination on the data pin with a bias of V
CC/2. The time from OE# high to the
data bus driven to VCC/2 is taken as tDF.
Parameter
Description
Test Setup
Speed Option
JEDEC
Std
10
12
Unit
t
AVAV
t
RC
Read Cycle Time (Note 1)
Min
100
120
ns
t
AVQV
t
ACC
Address to Output Delay
CE#, OE# = V
IL
Max
100
120
ns
tPRC
Page Read Cycle
Min
40
50
ns
tPACC
Page Address to Output Delay
CE#, OE# = VIL
Max
40
50
ns
tELQV
tCE
Chip Enable to Output Delay
OE# = VIL
Max
100
120
ns
tGLQV
tOE
Output Enable to Output Delay
Max
35
50
ns
tEHQZ
tDF
Chip Enable to Output High Z (Notes 1, 3)
Max
16
ns
tGHQZ
tDF
Output Enable to Output High Z (Notes 1, 3)
Max
16
ns
t
AXQX
t
OH
Output Hold Time From Addresses, CE# or OE#,
Whichever Occurs First
Min
0
ns
tOEH
Output Enable Hold
Time (Note 1)
Read
Min
0
ns
Toggle and
Data# Polling
Min
10
ns
tOH
tCE
Outputs
WE#
Addresses
CE#
OE#
HIGH Z
Output Valid
HIGH Z
Addresses Stable
tRC
tACC
tOEH
tRH
tOE
tRH
0 V
RY/BY#
RESET#
tDF
Figure 15.
Conventional Read Operation Timings



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