December 4, 2006 23569A5

Am29PDS322D

47

D A TA

SH EET

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 2.0 V V

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90

°C, V

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most words

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bits are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table

10 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

1

10

sec

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

93

sec

Word Program Time

16

360

µs

Excludes system level

overhead (Note 5)

Accelerated Word Program Time

5

µs

Chip Program Time (Note 3)

20

100

sec

Description

Min

Max

Input voltage with respect to V

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

–1.0 V

–100 mA

+100 mA

Parameter Description

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C10

Years

125

°C20

Years