D640D90VF datasheet(23/54 Pages) AMD

部件名	D640D90VF

功能描述	64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory

PDF	54 Pages

Scroll/Zoom	100%

制造商	AMD [Advanced Micro Devices]

网页	http://www.amd.com

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23 / 54 page

December 13, 2005

Am29DL640D

Table 10.

Device Geometry Definition

Addresses

(Word Mode)

Addresses

(Byte Mode)

Data

Description

27h

4Eh

0017h

Device Size = 2N byte

28h

29h

50h

52h

0002h

0000h

Flash Device Interface description (refer to CFI publication 100)

2Ah

2Bh

54h

56h

0000h

Max. number of byte in multi-byte write = 2N

(00h = not supported)

2Ch

58h

0003h

Number of Erase Block Regions within device

2Dh

2Eh

2Fh

30h

5Ah

5Ch

5Eh

60h

0007h

0000h

0020h

0000h

Erase Block Region 1 Information

(refer to the CFI specification or CFI publication 100)

31h

32h

33h

34h

62h

64h

66h

68h

007Dh

0000h

0001h

Erase Block Region 2 Information

(refer to the CFI specification or CFI publication 100)

35h

36h

37h

38h

6Ah

6Ch

6Eh

70h

0007h

0000h

0020h

0000h

Erase Block Region 3 Information

(refer to the CFI specification or CFI publication 100)

39h

3Ah

3Bh

3Ch

72h

74h

76h

78h

0000h

Erase Block Region 4 Information

(refer to the CFI specification or CFI publication 100)

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