Philips Semiconductors

Objective specification

SA9024

900 MHz transmit modulator and 1.3 GHz

fractional–N synthesizer

1997 Aug 01

6

ABSOLUTE MAXIMUM RATINGS

SYMBOL

PARAMETER

VALUE

UNIT

MIN.

MAX.

Supply voltage

-0.3

+4.5

V

Voltage applied to any other pin

-0.3

V

980

mW

Operation junction temperature

TBD

°C

Power input/output

+10/+14

dBm

DC current into any I/O pin

-10

+10

mA

Storage temperature

–65

+150

°C

Operating temperature

-40

+85

°C

DC ELECTRICAL CHARACTERISTICS

SYMBO

PARAMETER

TEST CONDITIONS

LIMITS

UNITS

L

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power supply range

3.6

3.75

3.9

V

Sleep mode

2

Standby mode

17

Supply current

Operating: full power analog

95

mA

CC

y

Operating: full power digital

52

52

I / I

In-phase differential input

quiescent

V

Q / Q

Quadrature phase differential input

quiescent

V

Input logic low

–0.3

0.3

V

Input logic high

0.7

V

Ambient temperature range

-40

+25

+85

°C

Digital Outputs Lock

Output voltage LOW

04

V

Output voltage LOW

0.4

V

Output voltage HIGH

V

RN

External resistor to ground

6

75

24

k

W

RN

External resistor to ground

6

7.5

24

k

W

External resistor to ground

4.7

k

W

Regulated voltage

RN = 7.5 k

W

1.23

V

Regulated voltage

1.3

V

PHSOUT programming

0.26

mA

PHSOUT gain

mA

K

f

PD phase gain

Transmit offset PLL in phase lock

4.33

mA/rad

Charge Pump Outputs (including fractional compensation pump, not PHS) RN = 7.5 k

W

Charge pump output current error

15

15

%

g

versus expected current.

–15

15

%

Sink to source current matching

–5

5

%

–10

10

%

Charge pump off, leakage current

–10

"1

10

nA

0.7

V

Charge pump output current error

15

15

%

g

versus expected current.

–15

15

%

Sink to source current matching

–10

10

%