| 数据搜索系统,热门电子元器件搜索 |
|
SST25WF080B 数据表(PDF) 9 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
SST25WF080B 数据表(HTML) 9 Page - Microchip Technology |
|
9 / 44 page ![]() 2013-2022 Microchip Technology Inc. and its subsidiaries DS20005164H-page 9 SST25WF080B 5.0 INSTRUCTIONS Instructions are used to read, write (Erase and Pro- gram), and configure the SST25WF080B devices. The instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. The Write Enable (WREN) instruction must be executed prior to Sector Erase, Block Erase, Page Program, Write STATUS Register or Chip Erase instructions. The complete instructions are provided in Table 5-1. All instructions are synchronized off a high-to-low transition of CE#. Inputs will be accepted on the rising edge of SCK start- ing with the most significant bit. CE# must be driven low before an instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for Read, Read-ID, and Read STATUS Reg- ister instructions). Any low-to-high transition on CE#, before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to standby mode. Instruction commands (Op Code), addresses, and data are all input from the most significant bit (MSb) first. TABLE 5-1: DEVICE OPERATION INSTRUCTIONS Instruction Description Op Code Cycle(1) Address Cycle(s)(2) Dummy Cycle(s) Data Cycle(s) Maximum Frequency Read Read Memory 0000 0011b (03H) 3 0 1 to 30 MHz Note 1: One bus cycle is eight clock periods. 2: Address bits above the most significant bit of each density can be VIL or VIH. 3: One bus cycle is four clock periods in Dual Operation 4: 4-Kbyte Sector Erase addresses: use AMS-A12, remaining addresses are “don’t care” but must be set either at VIL or VIH. 5: 64-Kbyte Block Erase addresses: use AMS-A16, remaining addresses are “don’t care” but must be set either at VIL or VIH. 6: The Read STATUS Register is continuous with ongoing clock cycles until terminated by a low-to-high tran- sition on CE#. 7: Device ID is read after three dummy address bytes. The Device ID output stream is continuous until ter- minated by a low-to-high transition on CE#. 8: The instructions Release from Deep Power down and Read-ID are similar instructions (ABH). Executing Read-ID requires the ABH instruction, followed by 24 dummy address bits to retrieve the Device ID. Release from Deep Power-Down only requires the instruction ABH. |
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |