ISC055N15NM6 datasheet(8/13 Pages) INFINEON

部件名	ISC055N15NM6

功能描述	MOSFET OptiMOS™ 6 Power‑Transistor, 150 V

PDF	13 Pages

Scroll/Zoom	100%

制造商	INFINEON [Infineon Technologies AG]

网页	http://www.infineon.com

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OptiMOS™ 6 Power‑Transistor, 150 V

ISC055N15NM6

Public

Datasheet

Revision 2.0

https://www.infineon.com

2024‑04‑16

Diagram 9: Normalized drain‑source on resistance

Diagram 10: Typ. gate threshold voltage

=f( ), =50 A, =10 V

T I

=f( ), = ; parameter:

T V V

Diagram 11: Typ. capacitances

Diagram 12: Forward characteristics of reverse diode

C=f( ); =0 V; =1 MHz

I =f( ); parameter:

DS(on)

GS(th

-75 -50 -25 0 25 50 75 100 125 150 175 200

Tj [°C]

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

-75 -50 -25 0 25 50 75 100 125 150 175 200

Tj [°C]

110 µA

1100 µA

100

125

150

VDS [V]

100

101

102

103

104

Ciss

Coss

Crss

0.0

0.4

0.8

1.2

1.6

2.0

2.4

VSD [V]

100

101

102

103

25 °C

25 °C. max

175 °C

175 °C. max

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