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ISC055N15NM6 数据表(PDF) 9 Page - Infineon Technologies AG |
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ISC055N15NM6 数据表(HTML) 9 Page - Infineon Technologies AG |
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9 / 13 page ![]() OptiMOS™ 6 Power‑Transistor, 150 V ISC055N15NM6 Public Datasheet 9 Revision 2.0 https://www.infineon.com 2024‑04‑16 Diagram 13: Avalanche characteristics Diagram 14: Typ. gate charge I =f( ); =25 Ω; parameter: t R T V =f( ), =25 A pulsed, =25 °C; parameter: Q I T V Diagram 15: Min. drain‑source breakdown voltage Gate charge waveforms V =f( ); =1 mA T I ‑ AS AV GS j,start GS gate D j DD BR(DSS) j D 10 1 100 101 102 103 tAV [µs] 10 1 100 101 102 25 °C 100 °C 150 °C 0 10 20 30 40 50 Qgate [nC] 0 2 4 6 8 10 30 V 75 V 120 V -75 -50 -25 0 25 50 75 100 125 150 175 200 Tj [°C] 142 144 146 148 150 152 154 156 158 160 162 G a t e c h a r g e w a v e f o r m s |
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