Datasheet

1

Revision 2.0

https://www.infineon.com

2024‑04‑16

MOSFET

OptiMOS™ 6 Power‑Transistor, 150 V

Features

Product validation

Fully qualified according to JEDEC for Industrial Applications

Table 1        Key Performance Parameters

Parameter

Value

Unit

V

150

V

R

5.5

mΩ

I

130

A

Q

130

nC

Q

43

nC

Q  (500 A/μs)

105

nC

PG‑TDSON‑8 FL

Type/Ordering Code

Package

Marking

Related Links

ISC055N15NM6

PG‑TDSON‑8

055N15N6

‑

N‑channel, normal level

• 

Very low on‑resistance R

• 

DS(on)

Superior thermal resistance

• 

100% avalanche tested

• 

Pb‑free lead plating; RoHS compliant

• 

Halogen‑free according to IEC61249‑2‑21

• 

MSL 1 classified according to J‑STD‑020

• 

DS

DS(on),max

D

oss

G

rr

 

 

Public

ISC055N15NM6

Final datasheet

Pin 1

2

3

4

4

3

2

1

5

6

7

8

5

6

7

8

Drain

Pin 5-8

Gate

Pin 4

Source

Pin 1-3

*1

*1: Internal body diode