TDF8541JSSLASHN2 datasheet(36/54 Pages) NXP

36 / 54 page

TDF8541

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Product data sheet

Rev. 3 — 13 December 2011

36 of 54

NXP Semiconductors

TDF8541

I2C-bus controlled 4

 45 W power amplifier

Diagnostic

VOL(DIAG)

LOW-level output voltage

on pin DIAG

fault condition; IDIAG = 1 mA

0.3

VO(offset_det)

output voltage at offset

detection

1.0

1.3

2.0

THDclip

total harmonic distortion

clip detection level

IB2[D7:D6] = 10; VP > 10 V

IB2[D7:D6] = 01; VP > 10 V

IB2[D7:D6] = 00; VP > 10 V

Tj(AV)(pwarn)

pre-warning average

junction temperature

IB3[D4] = 0 or legacy mode

150

160

170

C

IB3[D4] = 1

125

135

145

C

Tj(AV)(G(0.5dB)

average junction

temperature for 0.5 dB gain

reduction

Vi = 0.05 V

175

C

G

(th_fold)

gain reduction of thermal

foldback

all channels will switch off

output current

I2C-bus mode; IB4[D4] = 1; peak

current

IB4[D1] = 1

500

IB4[D1] = 0

275

I2C-bus mode; IB4[D4] = 0; peak

current

IB4[D1] = 1

250

IB4[D1] = 0

110

Amplifier

output power

RL =4 ; VP = 14.4 V;

THD = 0.5 %

RL =4 ; VP = 14.4 V;

THD = 10 %

RL =2 ; VP = 14.4 V;

THD = 0.5 %

RL =2 ; VP = 14.4 V;

THD = 10 %

Po(max)

maximum output power

RL =4 ; VP = 14.4 V;

Vi = 2 V RMS square wave

RL =4 ; VP = 15.2 V;

Vi = 2 V RMS square wave

RL =2 ; VP = 14.4 V;

Vi = 2 V RMS square wave

Table 20.

Characteristics …continued

Refer to test circuit (see Figure 29) at Tamb =25 C; VP = 14.4 V; unless otherwise specified. Tested at Tamb =25 C;

guaranteed for Tj = 40 C to +150 C; functionality is guaranteed for VP < 10 V unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

TDF8541JS/N2 数据表(PDF) 36 Page - NXP Semiconductors

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