TDF8541JSSLASHN2 datasheet(37/54 Pages) NXP

37 / 54 page

TDF8541

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Product data sheet

Rev. 3 — 13 December 2011

37 of 54

NXP Semiconductors

TDF8541

I2C-bus controlled 4

 45 W power amplifier

THD

total harmonic distortion

Po = 1 W to 12 W; fi = 1 kHz;

RL =4 

0.01

0.1

Po = 1 W to 12 W; fi =10kHz

0.2

0.4

line driver mode; Vo =1 V RMS

and 4 V RMS

0.02

0.05

low gain mode; Po =1W to 12 W;

fi = 1 kHz; RL =4 

0.01

0.1



channel separation

RS =1k; RACGND =250 

[4]

fi =1kHz

fi =10kHz

SVRR

supply voltage ripple

rejection

100 Hz to 10 kHz; RS =1k;

RACGND =250 ; tested at VP =

10.5 V

[4] 55

CMRR

common mode rejection

ratio

amplifier mode; Vcm = 0.3 V (p-p);

fi = 1 kHz to 3 kHz; RS = 1 k;

RACGND =250 

[4]

common mode input to

differential output (VO(dif) /

VI(cm) + 26 dB)

common mode input to

common mode output

(VO(cm) /VI(cm) + 26 dB)

V

output voltage variation

plop during switch-on and

switch-off

[5]

from off to mute and mute to off

7.5

from mute to on and on to mute

(soft mute)

7.5

from off to on and on to off

(start-up diagnostic enabled)

7.5

Vn(o)

output noise voltage

filter 20 Hz to 22 kHz (6th order);

RS =1k

mute mode

V

line driver mode

V

line driver mode; RS =50 

-25

V

amplifier mode

V

amplifier mode; RS =50 

-40

V

Gv(amp)

voltage gain amplifier

mode

single-ended in to differential out

25.5

26.5

Gv(ld)

voltage gain line driver

mode

single-ended in to differential out

15.5

16.5

input impedance

Tamb = 40 C to +105 C

6299k



Tamb = 0 C to 105 C

6299k





mute

mute attenuation

Vo /Vo(mute); Vi =50mV

Table 20.

Characteristics …continued

Refer to test circuit (see Figure 29) at Tamb =25 C; VP = 14.4 V; unless otherwise specified. Tested at Tamb =25 C;

guaranteed for Tj = 40 C to +150 C; functionality is guaranteed for VP < 10 V unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

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