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AS7C1024C 数据表(PDF) 3 Page - Alliance Semiconductor Corporation |
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AS7C1024C 数据表(HTML) 3 Page - Alliance Semiconductor Corporation |
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3 / 9 page ![]() AS7C1024C 12/5/06, v. 1.0 Alliance Memory P. 3 of 9 ® Note: 1 VIL min = -1.5V for pulse width less than 10ns, once per cycle. Recommended operating conditions Parameter Symbol Min Nominal Max Unit Supply Voltage VCC 4.5 5.0 5.5 V Input Voltage VIH 2.2 - VCC + 0.5 V VIL (1) –0.5(1) –0.8 V Ambient operating temperature (Industrial) TA –40 – 85 °C DC operating characteristics (over the operating range)1 Parameter Symbol Test conditions AS7C1024C-12 Unit Min Max Input leakage current |ILI|VCC = Max, VIN = GND to VCC –5 μA Output leakage current |ILO| VCC = Max, CE1 = VIH or CE2 = VIL, VOUT = GND to VCC –5 μA Operating power supply current ICC VCC = Max, CE1 ≤ VIL, CE2 ≥ V IH, f = fMax, IOUT = 0 mA – 160 mA Standby power supply current1 ISB VCC = Max, CE1 ≥ VIH and/or CE2 ≤ V IL, f = fMax –40 mA ISB1 VCC = Max, CE1 ≥ VCC–0.2V and/or CE2 ≤ 0.2V VIN ≤ 0.2V or VIN ≥ VCC – 0.2V, f = 0 –10 mA Output voltage VOL IOL = 8 mA, VCC = Min – 0.4 V VOH IOH = –4 mA, VCC = Min 2.4 – V Capacitance (f = 1 MHz, Ta = 25 o C, V CC = NOMINAL) 2 Parameter Symbol Signals Test conditions Max Unit Input capacitance CIN A, CE1, CE2, WE, OE VIN = 3dV 7 pF I/O capacitance CI/O I/O VOUT = 3dV 8 pF Note: This parameter is guaranteed by device characterization, but is not production tested. |
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