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AS7C1024C 数据表(PDF) 3 Page - Alliance Semiconductor Corporation

部件名 AS7C1024C
功能描述  5V 128K X 8 CMOS SRAM
PDF  9 Pages
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制造商  ALSC [Alliance Semiconductor Corporation]
网页  https://www.alliancememory.com
标志 ALSC - Alliance Semiconductor Corporation

AS7C1024C 数据表(HTML) 3 Page - Alliance Semiconductor Corporation

  AS7C1024C Datasheet HTML 1Page - Alliance Semiconductor Corporation AS7C1024C Datasheet HTML 2Page - Alliance Semiconductor Corporation AS7C1024C Datasheet HTML 3Page - Alliance Semiconductor Corporation AS7C1024C Datasheet HTML 4Page - Alliance Semiconductor Corporation AS7C1024C Datasheet HTML 5Page - Alliance Semiconductor Corporation AS7C1024C Datasheet HTML 6Page - Alliance Semiconductor Corporation AS7C1024C Datasheet HTML 7Page - Alliance Semiconductor Corporation AS7C1024C Datasheet HTML 8Page - Alliance Semiconductor Corporation AS7C1024C Datasheet HTML 9Page - Alliance Semiconductor Corporation  
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AS7C1024C
12/5/06, v. 1.0
Alliance Memory
P. 3 of 9
®
Note:
1
VIL min = -1.5V for pulse width less than 10ns, once per cycle.
Recommended operating conditions
Parameter
Symbol
Min
Nominal
Max
Unit
Supply Voltage
VCC
4.5
5.0
5.5
V
Input Voltage
VIH
2.2
-
VCC + 0.5
V
VIL
(1)
–0.5(1)
–0.8
V
Ambient operating temperature (Industrial)
TA
–40
85
°C
DC operating characteristics (over the operating range)1
Parameter
Symbol
Test conditions
AS7C1024C-12
Unit
Min
Max
Input leakage current
|ILI|VCC = Max, VIN = GND to VCC
–5
μA
Output leakage current
|ILO|
VCC = Max, CE1 = VIH or
CE2 = VIL, VOUT = GND to VCC
–5
μA
Operating power supply current
ICC
VCC = Max, CE1 ≤ VIL,
CE2
≥ V
IH, f = fMax,
IOUT = 0 mA
160
mA
Standby power supply current1
ISB
VCC = Max, CE1 ≥ VIH and/or
CE2
≤ V
IL, f = fMax
–40
mA
ISB1
VCC = Max, CE1 ≥ VCC–0.2V
and/or CE2
≤ 0.2V
VIN ≤ 0.2V or
VIN ≥ VCC – 0.2V, f = 0
–10
mA
Output voltage
VOL
IOL = 8 mA, VCC = Min
0.4
V
VOH
IOH = –4 mA, VCC = Min
2.4
V
Capacitance (f = 1 MHz, Ta = 25
o C, V
CC = NOMINAL)
2
Parameter
Symbol
Signals
Test conditions
Max
Unit
Input capacitance
CIN
A, CE1, CE2, WE, OE
VIN = 3dV
7
pF
I/O capacitance
CI/O
I/O
VOUT = 3dV
8
pF
Note:
This parameter is guaranteed by device characterization, but is not production tested.



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