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AS7C1024C 数据表(PDF) 6 Page - Alliance Semiconductor Corporation |
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AS7C1024C 数据表(HTML) 6 Page - Alliance Semiconductor Corporation |
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6 / 9 page ![]() AS7C1024C 12/5/06, v. 1.0 Alliance Memory P. 6 of 9 ® AC test conditions Notes 1 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification. 2 This parameter is sampled, but not 100% tested. 3 For test conditions, see AC Test Conditions, Figures A and B. 4tCLZ and tCHZ are specified with CL = 5 pF, as in Figure B. Transition is measured ±200 mV from steady-state voltage. 5 This parameter is guaranteed, but not 100% tested. 6 WE is high for read cycle. 7 CE and OE are low for read cycle. 8 Address is valid prior to or coincident with CE transition low. 9 All read cycle timings are referenced from the last valid address to the first transitioning address. 10 N/A 11 All write cycle timings are referenced from the last valid address to the first transitioning address. 12 N/A. 13 C = 30 pF, except all high Z and low Z parameters where C = 5 pF. – Output load: see Figure B. – Input pulse level: GND to 3.0 V. See Figure A. – Input rise and fall times: 3 ns. See Figure A. – Input and output timing reference levels: 1.5 V. 168 Ω Thevenin equivalent: DOUT +1.728 V 255 Ω C13 480 Ω DOUT GND +5 V Figure B: 5 V Output load 10% 90% 10% 90% GND +3.0V Figure A: Input pulse 3 ns |
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