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IRGPF30F 数据表(PDF) 26 Page - International Rectifier |
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IRGPF30F 数据表(HTML) 26 Page - International Rectifier |
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26 / 35 page ![]() TEMPERATURE & HUMIDITY (THB) Test circuit Conditions Bias: Vce = 100% of maximum rated V(BR)CES up to 500V: 500V for all devices with rated V(BR)CES DUT greater than 500V * DC Temperature: 85°C BIAS Relative Humidity: 85% Duration: 2000 Hours nominal Test points: 168, 500, 1000, 1500, 2000 Hours nominal. * Devices manufactured since week code 9640 the applied bias: V(BR)CES = Vmax or 100v which ever the lesser D = Diode for CoPack devices only Purpose Failure Modes Sensitive Parameters V(BR)CES,VCE(on) Temperature and Humidity bias testing for non-hermetic packages is to subject the devices to extremes of temperature and humidity to examine the ability of the package to withstand the deleterious effect of the humid environment. D There are two primary failure modes which have been observed. The first failure mode comes about as a result of the ingression of water molecules into the active area on the surface of the die. Once sufficient water has accumulated in the region of the electric field termination structure on the die, the perturbation of that field begins to degrade the breakdown characteristics of the device. The second failure mode that has been observed is due to cathodic corrosion of the aluminum emitter bonding pad. As with first failure mode, water will ingress to the top of the die. There, in the presence of applied bias, an electric current through the few monolayers of water will begin to cause the bond pad to dissolve. Eventually. the corrosion will proceed to the point where the current capability of the device is increased and become unstable. The dominance of either of these failure modes is basically determined by the amount of bias present during test. Under low bias conditions, the corrosion proceeds slowly, so the first failure mode will proceed very rapidly and the device will fail due to on-resistance before the breakdown characteristics can degrade. |
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