IRGPF30F datasheet(28/35 Pages) IRF

28 / 35 page

POWER CYCLING (P/C) Unbiased

Test circuit

Conditions

Bias

Set to give

∆ T = 100°C

Temperature

Tj =

∆ 100°C

Duration

10000 Cycles

BIAS

Test points

2500, 5000, 7500, 10000 Nominal

Input

Bias

D = Diode for CoPack devices only

Purpose

Failure Modes

Sensitive Parameters

ICES, V(BR)CES,Rθ

JC, VCE(on)

The purpose of Power Cycling is to simulate the thermal and current pulsing

stresses which devices will encounter in actual circuit applications when either the

equipment is turned on and off or power is applied to the device in short bursts

interspersed with quiescent, low power periods. The simulation is achieved by the

on/off application of power to each device while they are in the active linear

region.

The primary failure mode for power cycling is a thermal fatigue of the

silicon/metal interfaces and metal/metal interfaces. The fatigue, due to the

thermomechanical stresses from the heating and cooling, will cause electrical or

thermal performance or degrade.

If the degradation occurs at the header/die interface, then the thermal impedance

θθ

JC, will begin to increase well before any electrical effect is seen.

If the

degradation occurs at the wire bond/die interface or the wire bond/post interface,

then on resistance, VCE(on), will slowly increase or become unstable with time.

The thermal impedance, when measured during this time may appear to

decrease or change erratically.

The mechanical stresses from the application of power can also propagate

fractures in the silicon when the die is thermally mismatched to the solder/heat

sink system. These fractures will manifest themselves in the form of shorted

gates or degraded breakdown characteristics (V(BR)CES).

IGBT / CoPack

Quarterly Reliability Report

Page 28 of 35

IRGPF30F 数据表(PDF) 28 Page - International Rectifier

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