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ADRF5010BCCZN-R7 数据表(PDF) 4 Page - Analog Devices

部件名 ADRF5010BCCZN-R7
功能描述  Silicon SPST Switch, Nonreflective, 100 MHz to 55 GHz
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5010BCCZN-R7 数据表(HTML) 4 Page - Analog Devices

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Data Sheet
ADRF5010
SPECIFICATIONS
analog.com
Rev. 0 | 4 of 12
Table 1. Electrical Specifications (Continued)
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
CW
30
dBm
Case Temperature
TCASE
−40
+85
°C
1 For input linearity performance over frequency, see Figure 12 to Figure 15.
2 For power derating over frequency, see Figure 2.
3 Peak: ( ≤100 ns pulse duration, 5% duty cycle).
4 Pulse: (>100 ns pulse duration, 15% duty cycle).
SINGLE-SUPPLY OPERATION
VDD = 3.3 V, VSS = 0, VCTRL = 0 V or VDD, TCASE = 25°C for 50 Ω system, unless otherwise noted. RFx refers to RF1 or RF2
Table 2. Single-Supply Operation Specifications
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
FREQUENCY RANGE
f
0.1
55
GHz
SWITCHING CHARACTERISTICS
Rise Time and Fall Time
tRISE, tFALL
10% to 90% of RF output
50
ns
On Time and Off Time
tON, tOFF
50% VCTRL to 90% of RF output
85
ns
Settling Time (0.1 dB)
50% VCTRL to 0.1 dB of final RF output
120
ns
INPUT LINEARITY
f = 0.1 GHz to 55 GHz
Input Compression
P0.1dB
18
dBm
Third-Order Intercept
IP3
Two-tone input power = 6 dBm each tone, f = 0.1
GHz to 55 GHz, Δf = 1 MHz
53
dBm
RECOMMENDED OPERATING CONDITONS
RF Input Power
PIN
f = 0.1 GHz to 55 GHz, TCASE = 85°C
Through Path
RF signal is applied to RFx at Insertion Loss state
18
dBm
Terminated Path
RF signal is applied to RFx at Isolation state
18
dBm
Hot Switching
RF signal is applied to RFx while switching in be-
tween Insertion Loss and Isolation states
18
dBm



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