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ADRF5010BCCZN-R7 数据表(PDF) 1 Page - Analog Devices

部件名 ADRF5010BCCZN-R7
功能描述  Silicon SPST Switch, Nonreflective, 100 MHz to 55 GHz
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADRF5010BCCZN-R7 数据表(HTML) 1 Page - Analog Devices

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Data Sheet
ADRF5010
Silicon SPST Switch, Nonreflective, 100 MHz to 55 GHz
Rev. 0
DOCUMENT FEEDBACK
TECHNICAL SUPPORT
Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog
Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to
change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and
registered trademarks are the property of their respective owners.
FEATURES
Ultra-wideband frequency range: 0.1 GHz to 55 GHz
Nonreflective ports, high-power terminated path
Symmetrical ports
Low insertion loss
1.0 dB typical to 20 GHz
1.5 dB typical to 40 GHz
2.0 dB typical to 55 GHz
Isolation
30 dB typical to 50 GHz
28 dB typical to 55 GHz
High input linearity
P0.1dB: >33 dBm typical
Input IP3 >60 dBm typical
High power handling TCASE= 85 °C
Through path
Peak: 36 dBm
Pulse: 33 dBm
CW: 30 dBm
Terminated path
Peak: 33 dBm
Pulse 33 dBm
CW: 30 dBm
Hot switching
Peak: 33 dBm
Pulse: 33 dBm
CW: 30 dBm
Complementary metal-oxide semiconductor (CMOS)-/low voltage
transistor-transistor logic (LVTTL)-compatible controls
Radio frequency (RF) switching time: 30 ns
RF settling time (0.1 dB final RF output): 50 ns
Dual-supply operation: ±3.3 V
14-lead, 2.25 mm x 2.25 mm, LGA package
APPLICATIONS
Test and instrumentation
Cellular infrastructure: 5G mmWave
Military radios, radars, electronic countermeasures
Microwave radios and very small aperture terminals
Industrial scanners
FUNCTIONAL BLOCK DIAGRAM
Figure 1. Functional Block Diagram
GENERAL DESCRIPTION
The ADRF5010 is a nonreflective, single-pole single-throw (SPST)
switch manufactured in the silicon process.
The ADRF5010 operates from 0.1 GHz to 55 GHz with insertion
loss of lower than 2 dB and isolation of higher than 28 dB. The
device has an RF input power handling capability of 30 dBm for
through path and 30 dBm for hot switching.
The ADRF5010 requires dual-supply voltages of ±3.3 V. The device
employs CMOS- and LVTTL-compatible controls.
The ADRF5010 can also operate with a single positive supply volt-
age (VDD) applied while the negative supply voltage (VSS) is tied to
ground. In this operating condition, the small signal performance is
maintained while the switching characteristics, linearity, and power
handling performance is derated. See Table 2 for more details.
The ADRF5010 comes in a 14-lead, 2.25 mm x 2.25 mm, land grid
array (LGA) package and can operate from -40°C to +105°C.


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