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ADRF5010BCCZN-R7 数据表(PDF) 1 Page - Analog Devices |
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ADRF5010BCCZN-R7 数据表(HTML) 1 Page - Analog Devices |
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1 / 12 page ![]() Data Sheet ADRF5010 Silicon SPST Switch, Nonreflective, 100 MHz to 55 GHz Rev. 0 DOCUMENT FEEDBACK TECHNICAL SUPPORT Information furnished by Analog Devices is believed to be accurate and reliable "as is". However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. FEATURES ► Ultra-wideband frequency range: 0.1 GHz to 55 GHz ► Nonreflective ports, high-power terminated path ► Symmetrical ports ► Low insertion loss ► 1.0 dB typical to 20 GHz ► 1.5 dB typical to 40 GHz ► 2.0 dB typical to 55 GHz ► Isolation ► 30 dB typical to 50 GHz ► 28 dB typical to 55 GHz ► High input linearity ► P0.1dB: >33 dBm typical ► Input IP3 >60 dBm typical ► High power handling TCASE= 85 °C ► Through path ► Peak: 36 dBm ► Pulse: 33 dBm ► CW: 30 dBm ► Terminated path ► Peak: 33 dBm ► Pulse 33 dBm ► CW: 30 dBm ► Hot switching ► Peak: 33 dBm ► Pulse: 33 dBm ► CW: 30 dBm ► Complementary metal-oxide semiconductor (CMOS)-/low voltage transistor-transistor logic (LVTTL)-compatible controls ► Radio frequency (RF) switching time: 30 ns ► RF settling time (0.1 dB final RF output): 50 ns ► Dual-supply operation: ±3.3 V ► 14-lead, 2.25 mm x 2.25 mm, LGA package APPLICATIONS ► Test and instrumentation ► Cellular infrastructure: 5G mmWave ► Military radios, radars, electronic countermeasures ► Microwave radios and very small aperture terminals ► Industrial scanners FUNCTIONAL BLOCK DIAGRAM Figure 1. Functional Block Diagram GENERAL DESCRIPTION The ADRF5010 is a nonreflective, single-pole single-throw (SPST) switch manufactured in the silicon process. The ADRF5010 operates from 0.1 GHz to 55 GHz with insertion loss of lower than 2 dB and isolation of higher than 28 dB. The device has an RF input power handling capability of 30 dBm for through path and 30 dBm for hot switching. The ADRF5010 requires dual-supply voltages of ±3.3 V. The device employs CMOS- and LVTTL-compatible controls. The ADRF5010 can also operate with a single positive supply volt- age (VDD) applied while the negative supply voltage (VSS) is tied to ground. In this operating condition, the small signal performance is maintained while the switching characteristics, linearity, and power handling performance is derated. See Table 2 for more details. The ADRF5010 comes in a 14-lead, 2.25 mm x 2.25 mm, land grid array (LGA) package and can operate from -40°C to +105°C. |
类似零件编号 - ADRF5010BCCZN-R7 |
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类似说明 - ADRF5010BCCZN-R7 |
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