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STDRIVE102H 数据表(PDF) 7 Page - STMicroelectronics

部件名 STDRIVE102H
功能描述  Triple half-bridge gate driver with programmable currents
PDF  56 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STDRIVE102H 数据表(HTML) 7 Page - STMicroelectronics

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2.3
Thermal data
Thermal values are calculated by simulation.
Table 3. STDRIVE102BH thermal data (VFQFPN 48L, 6x6x1 mm)
Symbol
Parameter
Test condition
Value Unit
RthJA
Junction-to-ambient thermal resistance
Natural convection according to JESD51-2a
32.1
°C/W
RthJCtop Junction-to-case thermal resistance (top side)
Cold plate on top, according to JESD51-12
15.8
°C/W
RthJCbot Junction-to-case thermal resistance (bottom side)
Cold plate on exposed pad, according to
JESD51-12
3.4
°C/W
RthJB
Junction-to-board thermal resistance
According to JESD51-8
15.3
°C/W
ΨJT
Junction-to-top characterization parameter
According to JESD51-2a
0.1
°C/W
ΨJB
Junction-to-board characterization parameter
According to JESD51-2a
15
°C/W
Table 4. STDRIVE102H thermal data (VFQFPN 40L, 5x5x1 mm)
Symbol
Parameter
Test condition
Value Unit
RthJA
Junction-to-ambient thermal resistance
Natural convection according to JESD51-2a
36.3
°C/W
RthJCtop Junction-to-case thermal resistance (top side)
Cold plate on top, according to JESD51-12
19.5
°C/W
RthJCbot Junction-to-case thermal resistance (bottom side)
Cold plate on exposed pad, according to
JESD51-12
4.0
°C/W
RthJB
Junction-to-board thermal resistance
According to JESD51-8
18.0
°C/W
ΨJT
Junction-to-top characterization parameter
According to JESD51-2a
0.1
°C/W
ΨJB
Junction-to-board characterization parameter
According to JESD51-2a
17.7
°C/W
2.4
Electrical sensitivity characteristics
Table 5. ESD protection ratings
Symbol
Parameter
Test condition
Class
Value
Unit
HBM
Human Body Model
Conforming to ANSI/ESDA/JEDEC JS-001-2017
2
2000
V
CDM
Charge Device Model
Conforming to ANSI/ESDA/JEDEC JS-002-2018
C3
1000
V
STDRIVE102BH, STDRIVE102H
Device ratings
DS14545 - Rev 1
page 7/56



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