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HIP2104FRAANZ 数据表(PDF) 8 Page - Renesas Technology Corp

部件名 HIP2104FRAANZ
功能描述  60V, 1A/2A Peak, Half-Bridge Driver with 4V UVLO
PDF  31 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HIP2104FRAANZ 数据表(HTML) 8 Page - Renesas Technology Corp

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HIP2103, HIP2104
3. Specifications
FN8276 Rev.2.0
Page 8 of 30
Feb 25, 2021
3.
Specifications
3.1
Absolute Maximum Ratings
3.2
Thermal Information
Parameter (Note 5)
Minimum
Maximum
Unit
Supply Voltage VDD (HIP2103 only)
-0.3
16
V
Bridge Supply Voltage VBAT (HIP2104 Only)
-0.3
60
V
High side Bias Voltage (VHB - VHS) (Note 12)
-0.3
16
V
Logic Inputs VCen, VDen (HIP2104 Only)
- 0.3
VBAT + 0.3
V
Logic Inputs LI, HI
- 0.3
VDD + 0.3
V
Output Voltage LO
- 0.3
VDD + 0.3
V
Output Voltage HO
VHS - 0.3
VHB + 0.3
V
Voltage on HS (Note 12)
-10
60
V
Voltage on HB
VHS - 0.3
66
V
Average Current in Boot Diode (Note 6)
100
mA
Maximum Boot Capacitor Value
10
µF
Average Output Current in HO and LO (Note 6)
200
mA
ESD Rating
Value
Unit
Human Body Model Class 2 (Tested per JESD22-A114E)
2
kV
Charged Device Model Class IV
1
kV
Latch-Up (Tested per JESD-78B; Class 2, Level A) all pins
100
mA
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions can adversely
impact product reliability and result in failures not covered by warranty.
Notes:
5. All voltages are referenced to
VSS unless otherwise specified.
6. When driving a power MOSFET or similar capacitive load, the average output current is the average of the rectified output current. The
peak output currents of this driver are self limiting by trans conductance or rDS(ON) and do not require any external components to minimize
the peaks. If the output is driving a non-capacitive load, such as an LED, the maximum output current must be limited by external means
to less than the specified recommended rectified average output current.
Thermal Resistance (Typical)
θJA (°C/W)
θJC (°C/W)
8 Ld DFN Package (Notes 7, 10)46
7
12 Ld TDFN Package (Notes 7, 10)44
7
8 Ld SOIC Package (Notes 8, 9)
105
55
Notes:
7. θJA is measured in free air with the component mounted on a high-effective thermal conductivity test board with direct attach features. See
TB379.
8. θJA is measured with the component mounted on a high-effective thermal conductivity test board in free air. See TB379 for details.
9. For θJC, the case temperature location is taken at the package top center.
10. For θJC, the case temperature location is the center of the exposed metal pad on the package underside.
11. The maximum value of VHS must be limited so that VHB does not exceed 60V.
12. If the duration of the negative voltage is significant with respect to the time constant to charge the boot capacitor (across HB and HS) the
voltage on the boot capacitor can charge as high as VDD - (-VHS) = (VDD +VHS) potentially violating the Voltage Rating for (VHB - VHS).
13. When VBAT < ~13V, the output of VDD sags. The 5V minimum specified for VBAT is the minimum level for which the UVLO does not
activate.



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