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HIP2104FRAANZ 数据表(PDF) 19 Page - Renesas Technology Corp

部件名 HIP2104FRAANZ
功能描述  60V, 1A/2A Peak, Half-Bridge Driver with 4V UVLO
PDF  31 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

HIP2104FRAANZ 数据表(HTML) 19 Page - Renesas Technology Corp

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HIP2103, HIP2104
5. Functional Description
FN8276 Rev.2.0
Page 19 of 30
Feb 25, 2021
5.2
Input Signals
All input logic to the HIP2103 and HIP2104 is compatible with 3.3V or 5V logic levels. The HI and LI inputs are
tolerant to voltages up to the VDD supply. The VDen and VCen (the HIP2104 LDO’s VDD and VCC enable
signals) inputs are tolerant to voltages up to VBAT.
A fail-safe mechanism is included to improve system reliability and to minimize the possibility of catastrophic
bridge failures due to controller malfunction. Internal logic prevents both outputs from turning on simultaneously
when HI and LI are both high simultaneously. Dead time is still required on the rising edge of the HI (or LI) input
when the LI (or HI) input transitions low.
5.3
Sleep Mode
The HIP2103 and HIP2104 feature a Sleep Mode operation where the drivers enter a low power state when
inactive. The HIP2103 and HIP2104’s low Sleep Mode current (quiescent current consumed by VDD bias) is
invoked by setting both the LI and HI inputs of each driver high simultaneously or if the VDD voltage enters into
UVLO. See Figures 6 and 7 for details on entering and exiting Sleep Mode. Sleep Mode only disables the half-
bridge driver outputs. The HIP2104 Sleep Mode does not control the operation of the VCC and VDD LDO. They
are controlled only by the VCen and VDen inputs. Upon VDD power up (and clearing UVLO status), the HIP2103
and HIP2104 remains in Sleep Mode until it is exited by setting LI = 1 for time period tSIpR.
5.4
Selecting the Boot Capacitor Value
The boot capacitor value is chosen not only to supply the internal bias current of the high-side driver but more
significantly, to provide the gate charge of the driven FET without causing the boot voltage to sag excessively. In
practice, the boot capacitor should have a total charge that is about 20 times the gate charge of the driven power
FET for approximately a 5% drop in voltage after charge has been transferred from the boot capacitor to the gate
capacitance.
The following parameters are required to calculate the value of the boot capacitor for a specific amount of voltage
droop when using the HIP2103 and HIP2104. In the following example, some values used are specific to the
HIP2103 and HIP2104 and others are arbitrary. The values should be changed to comply with the actual
application.
The following equations calculate the total charge required for the Period:
Qc = Qg40_12V + Period x (IHB + VHO/RGS + Igate_leak)
Cboot = Qc/(Ripple * VDD)
Cboot = 0.324µF
If the gate-to-source resistor is removed (RGS is usually not needed or recommended):
Cboot = 0.124µF
VDD = 12V
This is the nominal value of VDD for the HIP2104
VHB = VDD = VHO
High-side driver bias voltage referenced to VHS
Period = 100µs
This is the longest expected switching period
IHB = IHBS20K + IHB20K = 295µA
High-side driver bias current at 20kHz
RGS = 10kΩ
Gate-source resistor
Ripple = 5%
Desired ripple voltage on the boot capacitor
Igate_leak = 100nA
Gate leakage current (from vendor datasheet)
Qg40_12V = 45nC
From Figure 23 on page 20



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