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ST10F271Z1 数据表(PDF) 159 Page - STMicroelectronics |
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ST10F271Z1 数据表(HTML) 159 Page - STMicroelectronics |
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159 / 185 page  ST10F271Z1 Electrical characteristics 159/185 The given values of CA do not include the stray capacitance of the package and of the printed circuit board: the negative resistance values are calculated assuming additional 5pF to the values in the table. The crystal shunt capacitance (C0) and the package capacitance between XTAL1 and XTAL2 pins is globally assumed equal to 10 pF. The external resistance between XTAL1 and XTAL2 is not necessary, since already present on the silicon. 25.8.12 32 kHz oscillator specifications VDD = 5 V ± 10%, VSS = 0 V, TA = –40 to +125 °C 1. At power-on a high current biasing is applied for faster oscillation start-up. Once the oscillation is started, the current biasing is reduced to lower the power consumption of the system. 2. Not 100% tested, guaranteed by design characterization. Figure 51. 32 kHz crystal oscillator connection diagram Table 73. Main oscillator negative resistance (module) CA = 15 pF CA = 25 pF CA = 35 pF min. typ. max. min. typ. max. min. typ. max. 4 MHz 545 Ω 1035 Ω – 550 Ω 1050 Ω – 430 Ω 850 Ω – 8 MHz 240 Ω 450 Ω – 170 Ω 350 Ω – 120 Ω 250 Ω – Table 74. 32kHz oscillator characteristics Symbol Parameter Conditions Value Unit min. typ. max. gm32 Oscillator transconductance 1) Start-up 20 31 50 µA/V Normal run 8 17 30 µA/V VOSC32 Oscillation amplitude 2) Peak to peak 0.5 1.0 2.4 V VAV32 Oscillation voltage level 2) Sine wave middle 0.7 0.9 1.2 V tSTUP32 Oscillator start-up time 2) Stable VDD –15 s CA CA crystal ST10F271Z1 |
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