CB45000 datasheet(1/16 Pages) STMICROELECTRONICS

部件名	CB45000

功能描述	HCMOS6 STANDARD CELLS

PDF	16 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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CB45000 SERIES

HCMOS6 STANDARD CELLS

March 1998

1/16

®

FEATURES

s

0.35 micron 5 layer metal HCMOS6 process,

retrograde well technology, low resistance

salicided active areas and polysilicide gates.

s

3.3 V optimized transistor with 5 V I/O inter-

face capability

s

2 - input NAND delay of 160 ps (typ) with

fanout = 2.

s

Broad I/O functionality including Low Voltage

CMOS, Low Voltage TTL and LVDS. Driving

capability to ISA, EISA, PCI, MCA, and SCSI

interface levels

s

High drive I/O; capability of sinking up to 24

mA with slew rate control, current spike sup-

pression and impedance matching.

s

Generators to support Single Port RAM,

Dual Port RAM, and ROM with BIST options.

s

DRAM integration in ASIC methodology

s

Extensive embedded function library includ-

ing ST DSP and micro cores, third party

micros and Synopsys synthetic libraries.

s

Fully independent power and ground conﬁg-

urations for inputs, core and outputs.

s

I/O ring capability up to 1000 pads.

s

Latchup trigger current > +/- 500 mA.

ESD protection > +/- 4000 volts typical value

s

Oscillators for wide frequency spectrum.

s

Broad range of 500+ SSI cells

s

Design For Test features including IEEE

1149.1 JTAG Boundary Scan architecture.

s

Cadence,

Mentor

and

Synopsys

based

design systems with interfaces from multiple

workstations.

s

Broad ceramic and plastic package range.

CB45000 Super-Integration

Cost Effective Product

s

Architecture Partitioning

s

Trouble free integration

s

Application Speciﬁc

Your Product is Unique

s

User speciﬁed cell integration

s

Design Conﬁdentiality

s

IP fully re-usable

DSP

ST20

DPRAM

ROM

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