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CB45000 数据表(PDF) 4 Page - STMicroelectronics |
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CB45000 数据表(HTML) 4 Page - STMicroelectronics |
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4 / 16 page ![]() CB45000 SERIES 4/16 ® LIBRARY The CB45000 Series library is organized into four categories: s SSI cell library s IO Cell library s Macrofunctions s Module generators SSI CELL LIBRARY OVERVIEW The design of the CB45000 family has been optimized to allow extremely high density, high speed and low power designs. For these reasons a wide range of cells with different ranges of driving capability are available in the library. The library cells have been optimized in term of functional and electrical parameters in order to have: s Good balancing s Maximum speed s Optimum Threshold voltage s Symmetric Vdd/Vss Noise margin s Minimum Power-Speed figure The geometrical aspect of the cells was configured to allow extremely dense design, fully exploiting the features of the Place and Route tool in terms of horizontal and vertical routing grids. For Place and Route, up to five levels of metal are utilized. Intracell wiring is limited as far as possible to first metal, with second, third and fourth metal levels dedicated to interconnect wiring and power distribution. The fifth metal is used for power and clock bussing. CORE LOGIC The propagation delays shown in the CB45000 data book are given for nominal processing, 3.3V operation, and 25 C temperature conditions. However there are additional factors that affect the delay characteristics of the macrocells. These include loading due to fanout and interconnect routing, voltage supply, junction temperature of the device, processing tolerance and input signal transition time. Prior to physical layout, the design system can estimate the delays associated with any critical path. The impact of the placement and routing can be accurately RC back annotated from the layout for final simulations of critical timing. The effects of junction temperature, (KT) and voltage supply (KV) on the delay numbers are summarized in Table 2 and Table 2. A third factor, is associated with process variation. This multiplier has a minimum of 0.8 and a maximum of 1.2. 10 Êm Figure 2. ND2 Core Cell Table 1 Junction Temperature Multipliers Temperature oCKT -55 0.77 -40 0.83 25 1.00 70 1.13 85 1.17 125 1.27 |
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