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LP2998MA/NOPB 数据表(PDF) 3 Page - Texas Instruments |
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LP2998MA/NOPB 数据表(HTML) 3 Page - Texas Instruments |
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3 / 42 page ![]() VDDQ PVIN AVIN 1 2 3 4 8 7 6 5 VSENSE VREF SD GND VTT VDDQ PVIN AVIN 1 2 3 4 8 7 6 5 VSENSE VREF SD GND VTT GND LP2998, LP2998-Q1 www.ti.com SNVS521K – DECEMBER 2007 – REVISED AUGUST 2014 6 Pin Configuration and Functions SO PowerPAD 8-LEAD DDA TOP VIEW SOIC 8-LEAD D TOP VIEW Pin Functions PIN NUMBER TYPE DESCRIPTION 1 GND Ground 2 SD Shutdown 3 VSENSE Feedback pin for regulating VTT. 4 VREF Buffered internal reference voltage of VDDQ/2 5 VDDQ Input for internal reference equal to VDDQ/2 6 AVIN Analog input pin 7 PVIN Power input pin 8 VTT Output voltage for connection to termination resistors EP Exposed pad thermal connection. Connect to Ground. 6.1 Pin Descriptions AVIN AND PVIN AVIN and PVIN are the input supply pins for the LP2998. AVIN is used to supply all the internal control circuitry. PVIN, however, is used exclusively to provide the rail voltage for the output stage used to create VTT. These pins have the capability to work off separate supplies depending on the application. Higher voltages on PVIN will increase the maximum continuous output current because of output RDSON limitations at voltages close to VTT. The disadvantage of high values of PVIN is that the internal power loss will also increase, thermally limiting the design. For SSTL-2 applications, a good compromise would be to connect the AVIN and PVIN directly together at 2.5 V. This eliminates the need for bypassing the two supply pins separately. The only limitation on input voltage selection is that PVIN must be equal to or lower than AVIN. It is recommended to connect PVIN to voltage rails equal to or less than 3.3 V to prevent the thermal limit from tripping because of excessive internal power dissipation. If the junction temperature exceeds the thermal shutdown than the part will enter a shutdown state identical to the manual shutdown where VTT is tri-stated and VREF remains active. VDDQ VDDQ is the input used to create the internal reference voltage for regulating VTT. The reference voltage is generated from a resistor divider of two internal 50 k Ω resistors. This ensures that VTT will track VDDQ / 2 precisely. The optimal implementation of VDDQ is as a remote sense. This can be achieved by connecting VDDQ directly to the 2.5 V rail at the DIMM instead of AVIN and PVIN. This ensures that the reference voltage tracks the DDR memory rails precisely without a large voltage drop from the power lines. For SSTL-2 applications VDDQ will be a 2.5 V signal, which will create a 1.25 V termination voltage at VTT (See Electrical Characteristics Table for exact values of VTT over temperature). Copyright © 2007–2014, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Links: LP2998 LP2998-Q1 |
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