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LP2998MA/NOPB 数据表(PDF) 3 Page - Texas Instruments

部件名 LP2998MA/NOPB
功能描述  LP2998/LP2998-Q1 DDR Termination Regulator
PDF  42 Pages
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制造商  TI2 [Texas Instruments]
网页  https://www.ti.com
标志 TI2 - Texas Instruments

LP2998MA/NOPB 数据表(HTML) 3 Page - Texas Instruments

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VDDQ
PVIN
AVIN
1
2
3
4
8
7
6
5
VSENSE
VREF
SD
GND
VTT
VDDQ
PVIN
AVIN
1
2
3
4
8
7
6
5
VSENSE
VREF
SD
GND
VTT
GND
LP2998, LP2998-Q1
www.ti.com
SNVS521K – DECEMBER 2007 – REVISED AUGUST 2014
6 Pin Configuration and Functions
SO PowerPAD
8-LEAD DDA
TOP VIEW
SOIC
8-LEAD D
TOP VIEW
Pin Functions
PIN
NUMBER
TYPE
DESCRIPTION
1
GND
Ground
2
SD
Shutdown
3
VSENSE
Feedback pin for regulating VTT.
4
VREF
Buffered internal reference voltage of VDDQ/2
5
VDDQ
Input for internal reference equal to VDDQ/2
6
AVIN
Analog input pin
7
PVIN
Power input pin
8
VTT
Output voltage for connection to termination resistors
EP
Exposed pad thermal connection. Connect to Ground.
6.1 Pin Descriptions
AVIN AND PVIN
AVIN and PVIN are the input supply pins for the LP2998. AVIN is used to supply all the internal control circuitry. PVIN,
however, is used exclusively to provide the rail voltage for the output stage used to create VTT. These pins have the
capability to work off separate supplies depending on the application. Higher voltages on PVIN will increase the
maximum continuous output current because of output RDSON limitations at voltages close to VTT. The disadvantage
of high values of PVIN is that the internal power loss will also increase, thermally limiting the design. For SSTL-2
applications, a good compromise would be to connect the AVIN and PVIN directly together at 2.5 V. This eliminates the
need for bypassing the two supply pins separately. The only limitation on input voltage selection is that PVIN must be
equal to or lower than AVIN. It is recommended to connect PVIN to voltage rails equal to or less than 3.3 V to prevent
the thermal limit from tripping because of excessive internal power dissipation. If the junction temperature exceeds the
thermal shutdown than the part will enter a shutdown state identical to the manual shutdown where VTT is tri-stated and
VREF remains active.
VDDQ
VDDQ is the input used to create the internal reference voltage for regulating VTT. The reference voltage is generated
from a resistor divider of two internal 50 k
Ω resistors. This ensures that VTT will track VDDQ / 2 precisely. The optimal
implementation of VDDQ is as a remote sense. This can be achieved by connecting VDDQ directly to the 2.5 V rail at
the DIMM instead of AVIN and PVIN. This ensures that the reference voltage tracks the DDR memory rails precisely
without a large voltage drop from the power lines. For SSTL-2 applications VDDQ will be a 2.5 V signal, which will
create a 1.25 V termination voltage at VTT (See Electrical Characteristics Table for exact values of VTT over
temperature).
Copyright © 2007–2014, Texas Instruments Incorporated
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Product Folder Links: LP2998 LP2998-Q1



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