April 2016

DocID17391 Rev 2

1/14

This is information on a product in full production.

www.st.com

STTH4R02-Y

Automotive ultrafast recovery diode

Datasheet - production data

Features



Very low conduction losses



Negligible switching losses



Low forward and reverse recovery times



High junction temperature



PPAP capable



AEC-Q101 qualified

Description

This device uses ST's new 200 V planar Pt

doping technology, and it is especially suited for

switching mode base drive and transistor circuits.

Packaged in SMB, SMC and DPAK, it is intended

for use in low voltage, high frequency inverters,

freewheeling and polarity protection in

automotive applications.

Table 1: Device summary

Symbol

Value

IF(AV)

4 A

VRRM

200 V

Tj (max.)

175 °C

VF (typ.)

0.76 V

trr (typ.)

16 ns

SMB

K

K

A

SMC

A

K

A

A

DPAK

K

NC