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STTH4R02SY 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH4R02SY
功能描述  Automotive ultrafast recovery diode
PDF  14 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH4R02SY 数据表(HTML) 3 Page - STMicroelectronics

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STTH4R02-Y
Characteristics
DocID17391 Rev 2
3/14
Table 5: Dynamic characteristics
Symbol
Parameters
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse
recovery time
Tj = 25 °C
IF = 1 A; dIF/dt = -
50 A/μs;
VR = 30 V
-
24
30
ns
IF = 1 A; dIF/dt = -
100 A/μs;
VR = 30 V
-
16
20
IRM
Reverse
recovery
current
Tj = 125 °C
IF = 4 A; dIF/dt = -
200 A/μs;
VR = 160 V
-
4.4
5.5
A
trr
Reverse
recovery time
-
27
ns
Qrr
Reverse
recovery
charges
-
60
nC
1.1
Characteristics (curves)
Figure 1: Peak current versus duty cycle
Figure 2: Forward voltage drop versus forward
current (typical values)
Figure 3: Forward voltage drop versus forward
current (maximum values)
Figure 4: Relative variation of thermal impedance,
junction to case, versus pulse duration
0
5
10
15
20
25
30
35
40
45
50
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
δ
IM(A)
T
δ= tp/T
tp
P = 1 W
P = 2 W
P = 5 W
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IFM(A)
T
j=25°C
T
j=150°C
VFM(V)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
1.0E+02
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VFM(V)
IFM(A)
T =25°C
j
T =150°C
j
0.1
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Zth(j-c)/Rth(j-c)
t
P
(s)
DPAK
Single pulse



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