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STTH4R02SY 数据表(PDF) 3 Page - STMicroelectronics |
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STTH4R02SY 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 14 page ![]() STTH4R02-Y Characteristics DocID17391 Rev 2 3/14 Table 5: Dynamic characteristics Symbol Parameters Test conditions Min. Typ. Max. Unit trr Reverse recovery time Tj = 25 °C IF = 1 A; dIF/dt = - 50 A/μs; VR = 30 V - 24 30 ns IF = 1 A; dIF/dt = - 100 A/μs; VR = 30 V - 16 20 IRM Reverse recovery current Tj = 125 °C IF = 4 A; dIF/dt = - 200 A/μs; VR = 160 V - 4.4 5.5 A trr Reverse recovery time - 27 ns Qrr Reverse recovery charges - 60 nC 1.1 Characteristics (curves) Figure 1: Peak current versus duty cycle Figure 2: Forward voltage drop versus forward current (typical values) Figure 3: Forward voltage drop versus forward current (maximum values) Figure 4: Relative variation of thermal impedance, junction to case, versus pulse duration 0 5 10 15 20 25 30 35 40 45 50 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 δ IM(A) T δ= tp/T tp P = 1 W P = 2 W P = 5 W 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 IFM(A) T j=25°C T j=150°C VFM(V) 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VFM(V) IFM(A) T =25°C j T =150°C j 0.1 1.0 1.E-03 1.E-02 1.E-01 1.E+00 Zth(j-c)/Rth(j-c) t P (s) DPAK Single pulse |
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