Characteristics

STTH4R02-Y

2/14

DocID17391 Rev 2

1

Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

Tj = -40 °C to + 175 °C

200

V

IF(RMS)

Forward rms current

10

A

IF(AV)

Average forward current

δ = 0.5, square wave

DPAK

Tc = 160 °C

4

A

SMB, SMC

Tlead = 95 °C

IFSM

Surge non repetitive

forward current

tp = 10 ms sinusoidal

70

A

Tstg

Storage temperature range

-65 to +175

°C

Tj

Maximum operating junction temperature(1)

-40 to +175

°C

Notes:

(1)(dPtot/dTj) < (1/Rth(j-a)) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Maximum

Unit

Rth(j-c)

Junction to case

DPAK

3.5

°C/W

Rth(j-l)

Junction to lead

SMB, SMC

20

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

3

µA

Tj = 125 °C

-

2

20

VF(2)

Forward voltage drop

Tj = 25 °C

IF = 4 A

-

0.95

1.05

V

Tj = 150 °C

-

0.76

0.83

Notes:

(1)Pulse test: tp = 5 ms, δ < 2%

(2)Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.67 x IF(AV) + 0.04 IF2(RMS)