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IS25LE02GG-RHLA2:P-TY 数据表(PDF) 130 Page - Integrated Silicon Solution, Inc

部件名 IS25LE02GG-RHLA2:P-TY
功能描述  SERIAL FLASH MEMORY 133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  187 Pages
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制造商  ISSI [Integrated Silicon Solution, Inc]
网页  http://www.issi.com
标志 ISSI - Integrated Silicon Solution, Inc

IS25LE02GG-RHLA2:P-TY 数据表(HTML) 130 Page - Integrated Silicon Solution, Inc

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IS25LE02GG
IS25WE02GG
Integrated Silicon Solution, Inc.- www.issi.com
130
Rev. A1
10/02/2025
Figure 8.88 FRDDTR Sequence (BDh [EXTADD=1] or BEh, 4-byte address)
CE#
SCK
IO0
IO1
Instruction = BDh/BEh
CE#
SCK
IO0
IO1
4-byte Address
High Impedance
0
1
2
3
4
5
6
7
8
9
10
...
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
Mode 3
Mode 0
tV
30 28 26
0
7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1 7 5 3 1
4 Dummy Cycles
31 29 27
1
Data Out
...
6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0 6 4 2 0
Data Out
Data Out
Data Out
Data Out
Data Out
24 22 20
25 23 21
18
19
7 5
6 4
3 1
2 0
Mode Bits
...
Mode Bits
...
...
...
Notes:
1. If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles
are same, then X should be Hi-Z.



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