STM32H533CE datasheet(21/231 Pages) STMICROELECTRONICS

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DS14539 Rev 1

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STM32H533xx

Functional overview

Option bytes are available to set the flash memory protection mechanisms:

•

Different product states for protecting memory content from debug access

•

Write protection (WRP) to protect areas against erasing and programming. Two areas

per bank can be selected with 8-Kbyte granularity.

•

Sector group write-protection (WRPSG), protecting up to 32 groups of four sectors

(32 Kbytes) per bank

•

Two secure-only areas (one per user flash memory bank). When enabled, this area is

accessible only if the STM32 device operates in Secure-access mode

•

One HDP area per bank providing temporal isolation for startup code

The whole non-volatile memory embeds the error correction code (ECC) feature supporting:

•

Single-error detection and correction

•

Double-error detection

•

ECC fail address report

3.4.1

FLASH security and protections

Sensitive information is stored in the flash memory and it is important to protect the memory

against unwanted operations such as reading confidential areas, illegal programming of

immutable sectors, or malicious flash memory erasing.

For that purpose FLASH implements the following protection mechanisms:

•

TrustZone backed watermark and block security protection

•

Temporal isolation protection (HDP)

•

Configuration protection

•

User flash memory write protection

•

Device non-volatile security life cycle and application boot state management

•

OTP locking

Refer to the product reference manual for a detailed description of the security mechanisms.

3.4.2

FLASH privilege protection

Each flash memory sector can be programmed on the fly as privileged or unprivileged.

3.5

Embedded SRAMs

Four SRAMs are embedded in the STM32H533xx devices, each with specific features.

SRAM1, SRAM2, and SRAM3 are the main SRAMs.

These SRAMs are made of several blocks that can be powered down in Stop mode to

reduce consumption:

•

SRAM1: 128 Kbytes

•

SRAM2: 80 Kbytes with ECC

•

SRAM3: 64 Kbytes

•

BKPSRAM (backup SRAM): 2 Kbytes with ECC. The BKPSRAM can be retained in all

low-power modes and when VDD is off in VBAT mode.

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