NRF51822-CFAB-R datasheet(65/130 Pages) NORDIC

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Page 65

nRF51822 Product Specification v3.3

8.22

Non-Volatile Memory Controller (NVMC) specifications

Flash write is performed by executing a program that writes one word (32 bit) consecutively after the other

to the flash memory.

The program performing the flash write operation could be set up to run from flash or from RAM. The timing

of one flash write operation depends on whether the next instructions following the flash write will be

fetched from flash or from RAM. Any fetch from flash before the write operation is finished will give

tWRITE,FLASH timing.

The flash memory is organized in 256 byte rows starting at CODE and UICR start addresses. Crossing from

one row to another will affect the flash write timing when running from RAM.

The time it takes to program the flash memory will depend on different parameters:

• Whether the program doing the flash write is running from RAM or running from flash.

• When running from RAM we will have different timing for:

• First write operation.

• Repeated write operations within the same row.

• Repeated write operation that are crossing from one row to another.

Table 61 NVMC specifications

Symbol

Description

Note

Min.

Typ.

Max.

Units

Test

level

tERASEALL

Erase flash memory.

1, 2

1. Max timing is assuming using RC16M, worst case tolerance.

2. The CPU will be halted for the duration of NVMC operations if the CPU tries to fetch data/code from the flash memory.

22.3

tPAGEERASEALL

Erase page in flash memory.

1, 2

22.3

tWRITE,FLASH

Program running from flash.

Write one word to flash memory.

1, 3

3. The CPU will be halted for the duration of NVMC operations.

46.3

μs

tWRITE,RAM,1st

Program running from RAM. Write

the first word to flash memory.

39.3

μs

tWRITE,RAM,2nd

Program running from RAM.

Repeated writes operations

following the first, within the

same row.

22.3

μs

tWRITE,RAM,3rd

Program running from RAM.

Repeated write operation, new

word is located on a different row

compare to the previous write.

46.3

μs

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