ELECTRICAL CHARACTERISTICS (8V

erwise specified.)

1)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Unit

SUPPLY

Total Supply Current

EN = HIGH

≤ 85°C

40

100

µA

Operating Supply Current

4.5

mA

5V Supply Current

EN = LOW

1.4

10

mA

FULL BRIDGES

Current bit

combinations LL, LH,

≥ 12V

0.4

0.7

Ω

RDSON of Source Transistors

0.4

0.7

Ω

RDSON of Sink Transistors +

Current bit

Combinations LL, LH,

1.6

3

Ω

Forward Voltage of the DMOS

Body Diodes

EN = HIGH

≥ 12V

1

1.4

V

Reverse DMOS Voltage

EN = LOW

0.5

0.9

V

Rise and Fall Time of Outputs

Chopping 550mA

0.3

0.6

1.5

µs

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

DC Supply Voltage

-0.3 to 35

V

Pulsed supply voltage T < 400ms

-0.3 to 40

V

Output Voltages

or GND depending on the

current direction

DC Output Currents

Peak Output Currents (T/tp

≥ 10)

±1.2

±2.5

A

A

Sense Resistor Voltages

-0.3 to 6.2

V

Logic Supply Voltages

-0.3 to 6.2

V

-0.3 to 10

V

Logic Input Voltages

-2 to 8

V

Oscillator Voltage Range, Logic Output

V

Note: ESD for all pins, except pins SDO, SRA and SRB, are according to MIL883C, tested at 2kV, corre sponding to a maximum energy

dissipation of 0.2mJ. SDO, SRA and SRB pins are tested with 800V.

THERMAL DATA

Symbol

Parameter

Value

Unit

Typical Thermal Resistance Junction to Case

5

°C/W

Typical Thermal Resistance Junction to Ambient

(6cm

µm Thhickness)

35

°C/W

Typical Thermal Resistance Junction to Ambient

(soldered on a FR 4 board with through holes for heat transfer

and external heat sink applied)

8

°C/W

Storage Temperature

-40 to 150

°C

Typical Thermal Shut-Down Temperature

180

°C

L9935

3/19