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SCT027TO65G3 数据表(PDF) 5 Page - STMicroelectronics

部件名 SCT027TO65G3
功能描述  Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SCT027TO65G3 数据表(HTML) 5 Page - STMicroelectronics

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2.1
Electrical characteristics (curves)
Figure 1. Safe operating area
GPDP191120241607SOA
10 2
10 1
10 0
10 -1
10 -1
10 0
10 1
10 2
ID
(A)
VDS (V)
tp=100µs
tp=10µs
tp=1ms
tp=10ms
IDM
V(BR)DSS
Operation
in
this
area
is
limited
by
R
DS(on)
RDS(on) max.
single pulse
TC = 25 °C
TJ ≤ 175 °C
tp=1µs
tp=10µs
tp=100µs
tp=1ms
tp=10ms
V(BR)DSS
tp=1µs
Figure 2. Maximum transient thermal impedance
GPDP191120241608ZTH
10 -1
10 -2
10 -3
10 -6
10 -5
10 -4
10 -3
10 -2
tp (s)
Single pulse
0.05
duty=0.5
3
2
4
ZthJC
(°C/W)
ton
T
duty = ton / T
RthJC = 0.38 °C/W
Figure 3. Typical output characteristics (TJ = 25 °C)
GPDP191120241609OC25
180
150
120
90
60
30
0
0
1
2
3
4
5
6
ID
(A)
VDS (V)
6 V
8 V
10 V
12 V
14 V
16 V
18 V
VGS= 20 V
Figure 4. Typical output characteristics (TJ = 175 °C)
GPDP191120241609OC175
180
150
120
90
60
30
0
0
1
2
3
4
5
6
6 V
8 V
10 V
12 V
14 V
16 V
VGS= 18, 20 V
ID
(A)
VDS (V)
4 V
Figure 5. Typical transfer characteristics
GPDP191120241609TCH
180
150
120
90
60
30
0
0
4
8
12
16
ID
(A)
VGS (V)
TJ= 25 °C
VDS= 5 V
TJ= 175 °C
Figure 6. Total power dissipation
GPDP191120241610PDT
360
300
240
180
120
60
0
-75
-25
25
75
125
175
PTOT
(W)
TC (°C)
TJ= 175 °C
SCT027TO65G3
Electrical characteristics
DS14846 - Rev 2
page 5/15



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