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SCT027TO65G3 数据表(PDF) 5 Page - STMicroelectronics |
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SCT027TO65G3 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 15 page ![]() 2.1 Electrical characteristics (curves) Figure 1. Safe operating area GPDP191120241607SOA 10 2 10 1 10 0 10 -1 10 -1 10 0 10 1 10 2 ID (A) VDS (V) tp=100µs tp=10µs tp=1ms tp=10ms IDM V(BR)DSS Operation in this area is limited by R DS(on) RDS(on) max. single pulse TC = 25 °C TJ ≤ 175 °C tp=1µs tp=10µs tp=100µs tp=1ms tp=10ms V(BR)DSS tp=1µs Figure 2. Maximum transient thermal impedance GPDP191120241608ZTH 10 -1 10 -2 10 -3 10 -6 10 -5 10 -4 10 -3 10 -2 tp (s) Single pulse 0.05 duty=0.5 3 2 4 ZthJC (°C/W) ton T duty = ton / T RthJC = 0.38 °C/W Figure 3. Typical output characteristics (TJ = 25 °C) GPDP191120241609OC25 180 150 120 90 60 30 0 0 1 2 3 4 5 6 ID (A) VDS (V) 6 V 8 V 10 V 12 V 14 V 16 V 18 V VGS= 20 V Figure 4. Typical output characteristics (TJ = 175 °C) GPDP191120241609OC175 180 150 120 90 60 30 0 0 1 2 3 4 5 6 6 V 8 V 10 V 12 V 14 V 16 V VGS= 18, 20 V ID (A) VDS (V) 4 V Figure 5. Typical transfer characteristics GPDP191120241609TCH 180 150 120 90 60 30 0 0 4 8 12 16 ID (A) VGS (V) TJ= 25 °C VDS= 5 V TJ= 175 °C Figure 6. Total power dissipation GPDP191120241610PDT 360 300 240 180 120 60 0 -75 -25 25 75 125 175 PTOT (W) TC (°C) TJ= 175 °C SCT027TO65G3 Electrical characteristics DS14846 - Rev 2 page 5/15 |
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