Figure 7. Maximum continuous drain current vs case

temperature

GPDP191120241611DCT

60

50

40

30

20

10

0

-75

-25

25

75

125

175

ID

(A)

TC (°C)

Bonding wire limit

TJ= 175 °C

Figure 8. Normalized breakdown voltage vs temperature

GPDP201120241356BDV

1.2

1.1

1.0

0.9

0.8

0.7

-75

-25

25

75

125

175

V(BR)DSS

(norm.)

TJ (°C)

ID = 1 mA

Figure 9. Normalized gate threshold vs temperature

GPDP191120241613VTH

1.4

1.2

1.0

0.8

0.6

0.4

-75

-25

25

75

125

175

VGS(th)

(norm.)

TJ (°C)

ID = 5 mA

Figure 10. Normalized on-resistance vs temperature

GPDP280120250936RON

2.0

1.5

1.0

0.5

0.0

-75

-25

25

75

125

175

RDS(on)

(norm.)

TJ (°C)

VGS = 18 V

Figure 11. Typical capacitance characteristics

GPDP191120241621CVR

10 3

10 2

10 1

10 -1

10 0

10 1

10 2

C

(pF)

VDS (V)

Ciss

Coss

Crss

f = 1 MHz

Figure 12. Typical gate charge characteristics

GPDP191120241621QVG

16

12

8

4

0

-4

-8

0

10

20

30

40

50

VGS

(V)

Qg (nC)

ID = 30 A

VDD = 400 V

SCT027TO65G3

Electrical characteristics

DS14846 - Rev 2

page 6/15