Features

Order code

VDS

RDS(on) typ.

ID

SCT027TO65G3

650 V

29 mΩ

60 A

•

Very fast and robust intrinsic body diode

•

Very low RDS(on) over the entire temperature range

•

High speed switching performances

•

Source sensing pin for increased efficiency

Applications

•

AC-DC converters

•

DC-DC converters

Description

This silicon carbide Power MOSFET device has been developed using ST’s

advanced and innovative 3rd generation SiC MOSFET technology. The device

features a very low RDS(on) over the entire temperature range combined with low

capacitances and very high switching operations, which improve application

performance in frequency, energy efficiency, system size and weight reduction.

TO-LL

Drain (TAB)

Gate (1)

Driver

source (2)

Power

source (3, 4, 5, 6, 7, 8)

N-chG1DS2PS34567DTAB

Product status link

SCT027TO65G3

Product summary

Order code

SCT027TO65G3

Marking

027TO65G3

Package

TO-LL

Packing

Tape and reel

Silicon carbide Power MOSFET 650 V, 29 mΩ typ., 60 A in a TO-LL package

SCT027TO65G3

Datasheet

DS14846 - Rev 2 - January 2025

For further information, contact your local STMicroelectronics sales office.

www.st.com