Figure 13. Typical reverse conduction characteristics

(TJ = 25 °C)

GPDP191120241622RCC25

-30

-60

-90

-120

-150

-180

-210

-8

-7

-6

-5

-4

-3

-2

-1

ID

(A)

VDS (V)

VGS= 18 V

VGS= 0 V

VGS= -5 V

Figure 14. Typical reverse conduction characteristics

(TJ = 175 °C)

GPDP191120241622RCC175

-30

-60

-90

-120

-150

-180

-210

-8

-7

-6

-5

-4

-3

-2

-1

ID

(A)

VDS (V)

VGS= 18 V

VGS= 0 V

VGS= -5 V

Figure 15. Typical switching energy vs drain current

GPDP191120241624SDC

400

300

200

100

0

0

10

20

30

40

50

60

E

(μJ)

ID (A)

Etot

RG = 5.6 Ω,

VDD = 400 V,

VGS = -5 to 18 V

Eoff

Eon

Figure 16. Typical switching energy vs supply voltage

GPDP191120241624VDD

250

200

150

100

50

0

150 200 250 300 350 400 450 500

E

(μJ)

VDD (V)

Etot

Eon

Eoff

VGS = -5 to 18 V

ID = 30 A,RG = 5.6 Ω,

Figure 17. Typical switching energy vs gate resistance

GPDP191120241626SLG

250

200

150

100

50

0

2

4

6

8

10

E

(μJ)

RG (Ω)

VDD = 400 V, ID = 30 A, VGS = -5 to 18 V

Etot

Eon

Eoff

SCT027TO65G3

Electrical characteristics

DS14846 - Rev 2

page 7/15