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SCT027TO65G3 数据表(PDF) 2 Page - STMicroelectronics |
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SCT027TO65G3 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 15 page ![]() 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 650 V VGS Gate-source voltage -10 to 22 V Gate-source voltage (recommended operating values) -5 to 18 Gate-source transient voltage, tp < 1 μs, t ≤ 10 hours over lifetime -11 to 25 ID(1) Drain current (continuous) at TC = 25 °C 60 A Drain current (continuous) at TC = 100 °C 60 IDM(2) Drain current (pulsed) 267 A PTOT Total power dissipation at TC = 25 °C 395 W Tstg Storage temperature range -55 to 175 °C TJ Operating junction temperature range °C 1. Limited by bonding wires. 2. Pulse width is limited by safe operating area. Table 2. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance, junction-to-case 0.38 °C/W RthJA Thermal resistance, junction-to-ambient 50 °C/W SCT027TO65G3 Electrical ratings DS14846 - Rev 2 page 2/15 |
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