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M14C64 数据表(PDF) 6 Page - STMicroelectronics |
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M14C64 数据表(HTML) 6 Page - STMicroelectronics |
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6 / 14 page ![]() M14C64, M14C32 6/14 Figure 7. Write Mode Sequences with WC=0 BYTE WRITE DEV SEL BYTE ADDR BYTE ADDR DATA IN WC PAGE WRITE DEV SEL BYTE ADDR BYTE ADDR DATA IN 1 WC DATA IN 2 AI01106B PAGE WRITE (cont'd) WC (cont'd) DATA IN N ACK R/W ACK ACK ACK ACK ACK ACK ACK R/W ACK ACK Table 6. Operating Modes Note: 1. X = VIH or VIL. Mode RW bit WC 1 Bytes Initial Sequence Current Address Read ‘1’ X 1 START, Device Select, RW = ‘1’ Random Address Read ‘0’ X START, Device Select, RW = ‘0’, Address ‘1’ X 1 reSTART, Device Select, RW = ‘1’ Sequential Read ‘1’ X ≥ 1 Similar to Current or Random Mode Byte Write ‘0’ VIL 1 START, Device Select, RW = ‘0’ Page Write ‘0’ VIL ≤ 32 START, Device Select, RW = ‘0’ Page Write The Page Write mode allows up to 32 bytes to be written in a single write cycle, provided that they are all located in the same ’row’ in the memory: that is the most significant memory address bits (b13-b5 for the M14C64 and b12-b5 for the M14C32) are the same. The master sends from one up to 32 bytes of data, each of which is ac- knowledged by the memory if the WC pin is low. If the WC pin is high, each data byte is followed by a NoACK and the location is not modified. After each byte is transferred, the internal byte address coun- ter (the five least significant bits only) is increment- |
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