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M25P10 数据表(PDF) 7 Page - STMicroelectronics |
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M25P10 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 21 page ![]() 7/21 M25P10 If more than 128 bytes are sent to the device, previously latched data are discarded and the last 128 data bytes are guaranteed to be programmed correctly within the same page. If less than 128 Data bytes are sent to device; they are correctly programmed at the requested addresses without having any effects on the other bytes of the same Page. The device must be deselected just after the eighth bit of the last data byte has been latched in. If not, the Page Program instruction is not executed. As soon as the device is deselected, the self-timed Page Program cycle (tPP) is initiated. While the Page Program cycle is in progress, the status register may be read to check the WIP bit value. WIP is high during the self-timed Page Program cycle and is low when it is completed. When the cycle is completed, the write enable latch (WEL) is reset. A Page Program instruction applied to a Page which is software protected by the BPi bits (see Table 4 and Table 5) is not initiated. The timing sequence is shown in Figure 12. Write Enable (WREN) and Write Disable (WRDI) The Write Enable Latch must be set prior to every Page Program (PP), Sector Erase (SE), Bulk Erase (BE) and Write Status Register (WRSR) operation. The WREN instruction, whose timing sequence is shown in Figure 7, will set the latch and the WRDI instruction, whose timing sequence is shown in Figure 8, will reset the latch. The Write Enable Latch is reset under the following conditions: – Power on – WRDI instruction completion – WRSR instruction completion – Page Program instruction completion – Sector Erase instruction completion – Bulk Erase instruction completion. After completion of either WREN or WRDI instruction, the chip enters a wait state and waits for a deselect. Figure 9. RDSR: Read Status Register Sequence C D S 2 1 3456789 10 11 12 13 14 15 INSTRUCTION 0 AI02031 Q 7 6543210 STATUS REG. OUT HIGH IMPEDANCE MSB 7 6543210 STATUS REG. OUT MSB MSB 7 Figure 8. WRDI: Reset Write Enable Latch Sequence C D AI03750 S Q 2 1 34567 HIGH IMPEDANCE 0 INSTRUCTION |
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