数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

M25P10 数据表(PDF) 11 Page - STMicroelectronics

部件名 M25P10
功能描述  1 Mbit Low Voltage Paged Flash Memory With 20 MHz Serial SPI Bus Interface
PDF  21 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M25P10 数据表(HTML) 11 Page - STMicroelectronics

Back Button M25P10 Datasheet HTML 7Page - STMicroelectronics M25P10 Datasheet HTML 8Page - STMicroelectronics M25P10 Datasheet HTML 9Page - STMicroelectronics M25P10 Datasheet HTML 10Page - STMicroelectronics M25P10 Datasheet HTML 11Page - STMicroelectronics M25P10 Datasheet HTML 12Page - STMicroelectronics M25P10 Datasheet HTML 13Page - STMicroelectronics M25P10 Datasheet HTML 14Page - STMicroelectronics M25P10 Datasheet HTML 15Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 11 / 21 page
background image
M25P10
11/21
sets the Write Enable Latch (WEL) which allows
the execution of any further Bulk Erase. The Bulk
Erase instruction is entered by driving the Chip
select input (S) low, followed by the instruction
byte on Data In input (D).
The Chip Select input (S) must be driven low for
the entire duration of the sequence. The device
must be deselected just after the eighth bit of the
instruction byte has been latched in. If not, the
Bulk Erase instruction is not executed. As soon as
the device is deselected, the self-timed Bulk Erase
cycle (tBE) is initiated. While the Bulk Erase cycle
is in progress, the status register may be read to
check the WIP bit value. WIP is high during the
self-timed Bulk Erase cycle and is low when it is
completed. When the cycle is completed, the write
enable latch (WEL) is reset.
The Bulk Erase instruction is internally taken into
account if, and only if, (BP0, BP1) = (0,0). In other
words, the Bulk Erase instruction is ignored if at
least one Sector is software protected. In this case
the Bulk Erase instruction is discarded and none of
the Sectors are erased.
The timing sequence is shown in Figure 14.
Enter Deep Power Down Mode (DP)
After Power-on, when S is high, the memory is
deselected, the Q output pin is at high impedance
and the device is in the Standby Power Mode state
(ICC1). Under this state, the Memory waits for a
select condition and is able to receive, decode and
execute all instructions.This mode is not the Deep
Power Down Mode which is entered by the way of
a specific instruction. The purpose of the Deep
Power down mode is to drastically reduce the
standby current from ICC1 to ICC2 (see Table 10).
Once the device has entered the Deep Power
Down Mode, all instructions are ignored except the
RES instruction which releases the part from this
Figure 15. DP: Enter Deep Power Down Mode Sequence
C
D
AI03753
S
2
1
34567
0
tDP
Deep Power Down Mode
Stand-by Power Down Mode
INSTRUCTION
Figure 16. RES: Release from Deep Power Down Mode and Read Electronic Signature Sequence
C
D
AI03755
S
Q
23
2
1
3456789 10
28 29 30 31 32 33 34 35
22 21
3210
36 37 38
765432
0
1
HIGH IMPEDANCE
DATA OUT (Electronic Signature)
INSTRUCTION
24 BIT ADDRESS
0
MSB
Stand-by Power Down Mode
Deep Power Down Mode



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com