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PRELIMINARY DATA

June 2000

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.

M25P10

1 Mbit Low Voltage Paged Flash Memory

With 20 MHz Serial SPI Bus Interface

s

1 Mbit PAGED Flash Memory

s

128 BYTE PAGE PROGRAM IN 3 ms TYPICAL

s

256 Kbit SECTOR ERASE IN 1 s TYPICAL

s

BULK ERASE IN 2 s TYPICAL

s

SINGLE 2.7 V to 3.6 V SUPPLY VOLTAGE

s

SPI BUS COMPATIBLE SERIAL INTERFACE

s

20 MHz CLOCK RATE AVAILABLE

s

SUPPORTS POSITIVE CLOCK SPI MODES

s

DEEP POWER DOWN MODE (1 µA TYPICAL)

s

ELECTRONIC SIGNATURE

s

10,000 ERASE/PROG CYCLES PER SECTOR

s

20 YEARS DATA RETENTION

s

–40 TO 85°C TEMPERATURE RANGE

DESCRIPTION

The M25P10 is an 1 Mbit Paged Flash Memory

fabricated

with

STMicroelectronics

High

Endurance CMOS technology. The memory is

accessed by a simple SPI bus compatible serial

interface. The bus signals are a serial clock input

(C), a serial data input (D) and a serial data output

(Q).

The device connected to the bus is selected when

the chip select input (S) goes low. Data is clocked

in during the low to high transition of clock C, data

Figure 1. Logic Diagram

AI03744

S

VCC

M25P10

HOLD

VSS

W

Q

C

D

Table 1. Signal Names

C

Serial Clock

D

Serial Data Input

Q

Serial Data Output

S

Chip Select

W

Write Protect

HOLD

Hold

Supply Voltage

Ground

SO8 (MN)

150 mil width

8

1

SO8 (MW)

200 mil width

8

1