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M25P10 数据表(PDF) 12 Page - STMicroelectronics |
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M25P10 数据表(HTML) 12 Page - STMicroelectronics |
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12 / 21 page ![]() M25P10 12/21 mode. At the same time, the RES instruction provides the Electronic Signature of the device on the Q output pin. At power down, the Deep Down Mode is automatically discarded. This causes the device to always wake up in the Standby Power Mode state after power-on. The DP instruction is entered by driving the Chip select input (S) low, followed by the instruction byte on Data In input (D). The Chip Select input (S) must be driven low for the entire duration of the sequence. The device must be deselected just after the eighth bit of the instruction byte has been latched in. If not, the DP instruction is not executed. As soon as the device is deselected, it requires tDP to enter the Deep Power Down Mode where standby current is reduced to ICC2. The timing sequence is shown in Figure 15. Release from Deep Power Down Mode and Read Electronic Signature (RES) Once the device has entered the Deep Power Down Mode, all instructions are ignored except the RES instruction which releases the part from this mode. At the same time, the RES instruction provides the Electronic Signature of the device on the Q output pin. Except during an Erase, Program cycle or Write Status register, the RES instruction always provides access to the Electronic Signature of the device and can be applied even if the Deep Power Down Mode has not been entered. Any RES attempt during an Erase, Program cycle or Write Status register, will be rejected and will deselect the chip without having any effects on the ongoing Erase, Program cycle or Write Status Register. The device is first selected by putting S low. The RES instruction byte is followed by a dummy three bytes address (A23-A0), each bit being latched-in on Data In input (D) during the rising edge of the clock (C). Then, the Electronic Signature stored in the memory is shifted out on the Q output pin, each bit being shifted out during the falling edge of the clock (C). It is possible to continuously read the Electronic Signature value. The RES operation is terminated by deselecting the chip after the Electronic Signature has been read at least one time (see Figure 16). At this step, the device is immediately put again in the Standby Power Mode state. It waits for a select condition and is able to receive, decode and execute all instructions. Deselecting the device after the 8 bits RES instruction has been sent but before the LSB of the Electronic Signature has been read, will insure the Deep Power Down Mode to be released but will generate a delay (tRES) before the device is put in Standby Power Mode state (see Figure 17) and S must remain high for at least tRES max value (see Table 13). POWER ON STATE At Power-up, the device must not be selected (that is the S input must follow the voltage supplied on the VCC pin) until the supply voltage reaches the minimum VCC value (2.7 V). Once VCC has reached the minimum operating voltage (2.7 V), the Chip Select input pin (S) must remain high for a time higher than tVSL min (See Table 8). After a Power up, the memory is in the following state: Figure 17. RES: Release from Deep Power Down Mode Sequence C D AI03754 S 2 1 34567 0 tRES Stand-by Power Down Mode Deep Power Down Mode Q HIGH IMPEDANCE INSTRUCTION |
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