M28F201 datasheet(1/21 Pages) STMICROELECTRONICS

部件名	M28F201

功能描述	2 Mb 256K x 8, Chip Erase FLASH MEMORY

PDF	21 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 21 page

M28F201

2 Mb (256K x 8, Chip Erase) FLASH MEMORY

April 1997

1/21

AI00637C

18

A0-A17

W

DQ0-DQ7

VPP

VCC

M28F201

G

E

VSS

8

Figure 1. Logic Diagram

A0-A17

Address Inputs

DQ0-DQ7

Data Inputs / Outputs

E

Chip Enable

G

Output Enable

W

Write Enable

VPP

Program Supply

VCC

Supply Voltage

VSS

Ground

Table 1. Signal Names

PLCC32 (K)

TSOP32 (N)

8 x 20 mm

5V

± 10% SUPPLY VOLTAGE

12V PROGRAMMING VOLTAGE

FAST ACCESS TIME: 70ns

BYTE PROGRAMMING TIME: 10

µs typical

ELECTRICAL CHIP ERASE in 1s RANGE

LOW POWER CONSUMPTION

– Active Current: 15mA typical

– Stand-by Current: 10

µA typical

10,000 PROGRAM/ERASE CYCLES

INTEGRATED ERASE/PROGRAM-STOP

TIMER

OTP COMPATIBLE PACKAGES and PINOUTS

ELECTRONIC SIGNATURE

– Manufacturer Code: 20h

– Device Code: F4h

DESCRIPTION

The M28F201 FLASH Memory product is a non-

volatile memories which may be erased electrically

at the chip level and programmed byte-by-byte. It

is organised as 256K bytes. It uses a command

register architecture to select the operating modes

and thus provide a simple microprocessor inter-

face. The M28F201 FLASH Memory product is

suitable for applications where the memory has to

be reprogrammed in the equipment. The access

time of 70ns makes the device suitable for use in

high speed microprocessor systems.

类似零件编号 - M28F201

制造商	部件名	数据表	功能描述
STMicroelectronics	M28F256	715Kb / 20P	256K(32K x8, Chip Erase)FLASH MEMORY Mar-1996
	M28F256-10B1TR	715Kb / 20P	256K(32K x8, Chip Erase)FLASH MEMORY Mar-1996
	M28F256-10B1TR	523Kb / 20P	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory Aug-1998
	M28F256-10B3TR	715Kb / 20P	256K(32K x8, Chip Erase)FLASH MEMORY Mar-1996
	M28F256-10B3TR	523Kb / 20P	512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory Aug-1998

More results

类似说明 - M28F201

制造商	部件名	数据表	功能描述
STMicroelectronics	M28F101	197Kb / 23P	1 Mb 128K x 8, Chip Erase FLASH MEMORY Apr-1997
STMicroelectronics	M28F256	715Kb / 20P	256K(32K x8, Chip Erase)FLASH MEMORY Mar-1996
Sharp Corporation	LH28F016SCH	1Mb / 43P	16-MBIT(2 MB x 8) SmartVoltage Flash MEMORY
Winbond	W29C020	267Kb / 21P	256K X 8 CMOS FLASH MEMORY
	W49F002U	303Kb / 23P	256K X 8 CMOS FLASH MEMORY
	W49F020	190Kb / 21P	256K X 8 CMOS FLASH MEMORY
	W49L201	190Kb / 23P	256K X 8 CMOS FLASH MEMORY
List of Unclassifed Man...	EN29F002N	267Kb / 32P	2 Megabit (256K x 8-bit) Flash Memory
Eon Silicon Solution In...	EN29F002A	431Kb / 35P	2 Megabit (256K x 8-bit) Flash Memory
List of Unclassifed Man...	BM29F400T	228Kb / 38P	4MEGABIT (512K x 8/ 256K x 16) 5VOLT SECTOR ERASE CMOS FLASH MEMORY