Symbol

Alt

Parameter

M28F201

Unit

-120

-150

EPROM

Interface

EPROM

Interface

Min

Max

Min

Max

1

1

µs

1

1

µs

Write Cycle Time (W controlled)

120

150

ns

Write Cycle Time (E controlled)

120

150

ns

Address Valid to Write Enable Low

0

0

ns

Address Valid to Chip Enable Low

0

0

ns

Write Enable Low to Address Transition

50

50

ns

Chip Enable Low to Address Transition

60

80

ns

Chip Enable Low to Write Enable Low

0

0

ns

Write Enable Low to Chip Enable Low

0

0

ns

Output Enable High to Write Enable Low

0

0

µs

Output Enable High to Chip Enable Low

0

0

µs

Input Valid to Write Enable High

50

50

ns

Input Valid to Chip Enable High

50

50

ns

Write Enable Low to Write Enable High (Write Pulse)

50

60

ns

Chip Enable Low to Chip Enable High (Write Pulse)

70

80

ns

Write Enable High to Input Transition

10

10

ns

Chip Enable High to Input Transition

10

10

ns

Duration of Program Operation (W contr.)

10

10

µs

Duration of Program Operation (E contr.)

10

10

µs

Duration of Erase Operation (W contr.)

9.5

9.5

ms

Duration of Erase Operation (E contr.)

9.5

9.5

ms

Write Enable High to Chip Enable High

0

0

ns

Chip Enable High to Write Enable High

0

0

ns

Write Enable High to Write Enable Low

20

20

ns

Chip Enable High to Chip Enable Low

20

20

ns

Write Enable High to Output Enable Low

6

6

µs

Chip Enable High to Output Enable Low

6

6

µs

Addess Valid to data Output

120

150

ns

(1)

Chip Enable Low to Output Transition

0

0

ns

Chip Enable Low to Output Valid

120

150

ns

(1)

Output Enable Low to Output Transition

0

0

ns

Output Enable Low to Output Valid

35

40

ns

(1)

Chip Enable High to Output Hi-Z

30

35

ns

(1)

Output Enable High to Output Hi-Z

30

35

ns

Address Transition to Output Transition

0

0

ns

Note: 1. Sampled only, not 100% tested

Table 10B. Read/Write Mode AC Characteristics, W and E Controlled

°C, –40 to 85 °C or –40 to 125 °C)

11/21

M28F201