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M28F201 数据表(PDF) 5 Page - STMicroelectronics

部件名 M28F201
功能描述  2 Mb 256K x 8, Chip Erase FLASH MEMORY
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M28F201 数据表(HTML) 5 Page - STMicroelectronics

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SRAM Interface Levels
EPROM Interface Levels
Input Rise and Fall Times
≤ 10ns
≤ 10ns
Input Pulse Voltages
0 to 3V
0.45V to 2.4V
Input and Output Timing Ref. Voltages
1.5V
0.8V and 2V
Table 6. AC Measurement Conditions
AI01275
3V
SRAM Interface
0V
1.5V
2.4V
EPROM Interface
0.45V
2.0V
0.8V
Figure 3. AC Testing Input Output Waveform
AI01276
1.3V
OUT
CL = 30pF or 100pF
CL = 30pF for SRAM Interface
CL = 100pF for EPROM Interface
CL includes JIG capacitance
3.3k
1N914
DEVICE
UNDER
TEST
Figure 4. AC Testing Load Circuit
Symbol
Parameter
Test Condition
Min
Max
Unit
CIN
Input Capacitance
VIN =0V
6
pF
COUT
Output Capacitance
VOUT =0V
12
pF
Note: 1. Sampled only, not 100% tested.
Table 7. Capacitance (1) (TA =25
°C, f = 1 MHz )
Read Mode. The Read Mode is the default at
power up or may be set-up by writing 00h to the
command register. Subsequent read operations
output data from the memory. The memory remains
in the Read Mode until a new command is written
to the command register.
Electronic Signature Mode. In order to select the
correct erase and programming algorithms for on-
board programming, the manufacturer and device
codes may be read directly. It is not neccessary to
apply a high voltage to A9 when using the com-
mand register. The Electronic Signature Mode is
set-up by writing 80h or 90h to the command
register. The following read cycles, with address
inputs 00000h or 00001h, output the manufacturer
or device codes. The command is terminated by
writing another valid command to the command
register (for example Reset).
5/21
M28F201



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