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APM32E103CEU6-R 数据表(PDF) 38 Page - Geehy Semiconductor Co., Ltd.

部件名 APM32E103CEU6-R
功能描述  Arm® Cortex®-M3 based 32-bit MCU
PDF  79 Pages
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制造商  GEEHY [Geehy Semiconductor Co., Ltd.]
网页  https://global.geehy.com/
标志 GEEHY - Geehy Semiconductor Co., Ltd.

APM32E103CEU6-R 数据表(HTML) 38 Page - Geehy Semiconductor Co., Ltd.

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（3） Positive injection is not possible on these I/Os. a negative injection is induced by VIN<VSS.
IINJ(PIN) must never be exceeded.
（4） A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS.
IINJ(PIN) must never be exceeded.
（5） When several inputs are submitted to a current injection, the maximum
ΣIINJ(PIN) is the
absolute sum of the positive and negative injected currents (instantaneous values).
5.3.4.
Electrostatic discharge (ESD)
Table 16 ESD Absolute Maximum Ratings
Symbol
Parameter
Conditions
Value
Unit
VESD(HBM)
Electrostatic discharge voltage (human body model)
TA = +25
℃
±
5000
V
Note: The samples are measured by a third-party testing organization and are not tested in production.
5.3.5.
Static latch-up (LU)
Table 17 Static Latch-up
Symbol
Parameter
Conditions
Type
LU
Class of static latch-up
TA = +25
℃/105℃, conforming to EIA/JESD78E
CLASS
Ⅱ A
Note: The samples are measured by a third-party testing organization and are not tested in production.
5.4.
On-chip memory
5.4.1.
Flash characteristics
Table 18 Flash Memory Characteristics
Symbol
Parameter
Conditions
Minimum
value
Typical
value
Maximum
value
Unit
tprog
16-bit programming time
TA = -40~105
℃
VDD=2.4~3.6V
40
46.08
70
μs
tERASE
Page (2KBytes) erase time
TA = -40~105
℃
VDD=2.4~3.6V
10
-
30
ms
tME
Whole erase time
TA = 40~105
℃
VDD=3.3V
10
-
30
ms
Vprog
Programming voltage
TA = -40~105
℃
2
-
3.6
V
tRET
Data saving time
TA=125℃
10.77
-
-
years
NRW
Erase cycle
TA=85°C
100K
-
-
cycles
Note: It is obtained from a comprehensive evaluation and is not tested in production.
5.5.
Clock
5.5.1.
Characteristics of external clock source
5.5.1.1.
High-speed external clock generated by crystal resonator
For detailed parameters (frequency, package, precision, etc.) of crystal resonator, please



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