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M48T35 数据表(PDF) 8 Page - STMicroelectronics |
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M48T35 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 18 page ![]() M48T35, M48T35Y 8/18 Table 10. Write Mode AC Characteristics (TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.75V to 5.5V or 4.5V to 5.5V) Note: 1. CL = 5pF. 2. If E goes low simultaneously with W going low, the outputs remain in the high impedance state. Symbol Parameter M48T35 / M48T35Y Unit -70 Min Max tAVAV Write Cycle Time 70 ns tAVWL Address Valid to Write Enable Low 0 ns tAVEL Address Valid to Chip Enable Low 0 ns tWLWH Write Enable Pulse Width 50 ns tELEH Chip Enable Low to Chip Enable High 55 ns tWHAX Write Enable High to Address Transition 0 ns tEHAX Chip Enable High to Address Transition 0 ns tDVWH Input Valid to Write Enable High 30 ns tDVEH Input Valid to Chip Enable High 30 ns tWHDX Write Enable High to Input Transition 5 ns tEHDX Chip Enable High to Input Transition 5 ns tWLQZ (1, 2) Write Enable Low to Output Hi-Z 25 ns tAVWH Address Valid to Write Enable High 60 ns tAVEH Address Valid to Chip Enable High 60 ns tWHQX (1, 2) Write Enable High to Output Transition 5 ns DATA RETENTION MODE With valid VCC applied, the M48T35/35Y operates as a conventional BYTEWIDE static RAM. Should the supply voltage decay, the RAM will automati- cally power-fail deselect, write protecting itself when VCC falls within the VPFD (max), VPFD (min) window. All outputs become high impedance, and all inputs are treated as "don't care." Note: A power failure during a write cycle may cor- rupt data at the currently addressed location, but does not jeopardize the rest of the RAM's content. At voltages below VPFD (min), the user can be as- sured the memory will be in a write protected state, provided the VCC fall time is not less than tF. The M48T35/35Y may respond to transient noise spikes on VCC that reach into the deselect window during the time the device is sampling VCC. There- fore, decoupling of the power supply lines is rec- ommended. When VCC drops below VSO, the control circuit switches power to the internal battery which pre- serves data and powers the clock. The internal button cell will maintain data in the M48T35/35Y for an accumulated period of at least 7 years when VCC is less than VSO. As system power returns and VCC rises above VSO, the battery is discon- nected, and the power supply is switched to exter- nal VCC. Write protection continues until VCC reaches VPFD (min) plus tREC (min). E should be kept high as VCC rises past VPFD (min) to prevent inadvertent write cycles prior to processor stabili- zation. Normal RAM operation can resume tREC after VCC exceeds VPFD (max). For more information on Battery Storage Life refer to the Application Note AN1012. |
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