M48T35 datasheet(5/18 Pages) STMICROELECTRONICS

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M48T35, M48T35Y

Table 5. Capacitance (1, 2)

(TA = 25 °C)

Note: 1. Effective capacitance measured with power supply at 5V.

2. Sampled only, not 100% tested.

3. Outputs deselected.

Table 6. DC Characteristics

(TA = 0 to 70 °C or –40 to 85 °C; VCC = 4.75V to 5.5V or 4.5V to 5.5V)

Note: 1. Outputs deselected.

2. Negative spikes of –1V allowed for up to 10ns once per cycle.

Table 7. Power Down/Up Trip Points DC Characteristics (1)

(TA = 0 to 70 °C or –40 to 85 °C)

Note: 1. All voltages referenced to VSS.

2. CAPHAT and M4T32-BR12SH1 SNAPHAT only, M4T28-BR12SH1 SNAPHAT top tDR = 7 years (typ).

3. Using larger M4T32-BR12SH6 SNAPHAT top (recommended for Industrial Temperature Range - grade 6 device).

Symbol

Parameter

Test Condition

Min

Max

Unit

CIN

Input Capacitance

VIN = 0V

CIO

(3)

Input / Output Capacitance

VOUT = 0V

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

(1)

Input Leakage Current

≤ VIN ≤ VCC

±1

µA

ILO

(1)

Output Leakage Current

≤ VOUT ≤ VCC

±5

µA

ICC

Supply Current

Outputs open

ICC1

Supply Current (Standby) TTL

E = VIH

3mA

ICC2

Supply Current (Standby) CMOS

E = VCC – 0.2V

3mA

VIL

(2)

Input Low Voltage

–0.3

0.8

VIH

Input High Voltage

2.2

VCC + 0.3

VOL

Output Low Voltage

IOL = 2.1mA

0.4

VOH

Output High Voltage

IOH = –1mA

2.4

Symbol

Parameter

Min

Typ

Max

Unit

VPFD

Power-fail Deselect Voltage

M48T35

4.5

4.6

4.75

M48T35Y

4.2

4.35

4.5

VSO

Battery Back-up Switchover Voltage

3.0

tDR

Expected Data Retention Time

(at 25°C)

Grade 1

10 (2)

YEARS

Grade 6

10 (3)

YEARS

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