| 数据搜索系统,热门电子元器件搜索 |
|
M48T35 数据表(PDF) 2 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
M48T35 数据表(HTML) 2 Page - STMicroelectronics |
|
2 / 18 page ![]() M48T35, M48T35Y 2/18 Figure 2A. DIP Connections A1 A0 DQ0 A7 A4 A3 A2 A6 A5 A13 A10 A8 A9 DQ7 W A11 G E DQ5 DQ1 DQ2 DQ3 VSS DQ4 DQ6 A12 A14 VCC AI01621B 8 1 2 3 4 5 6 7 9 10 11 12 13 14 16 15 28 27 26 25 24 23 22 21 20 19 18 17 M48T35 M48T35Y Table 2. Absolute Maximum Ratings (1) Note: 1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. Exposure to the absolute maximum rating conditions for extended periods of time may affect reliability. 2. Soldering temperature not to exceed 260°C for 10 seconds (total thermal budget not to exceed 150°C for longer than 30 seconds). CAUTION: Negative undershoots below –0.3V are not allowed on any pin while in the Battery Back-up mode. CAUTION: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets. Symbol Parameter Value Unit TA Ambient Operating Temperature Grade 1 0 to 70 °C Grade 6 –40 to 85 °C TSTG Storage Temperature (VCC Off, Oscillator Off) –40 to 85 °C TSLD (2) Lead Solder Temperature for 10 seconds 260 °C VIO Input or Output Voltages –0.3 to 7 V VCC Supply Voltage –0.3 to 7 V IO Output Current 20 mA PD Power Dissipation 1 W Figure 2B. SOIC Connections AI01622B 8 2 3 4 5 6 7 9 10 11 12 13 14 22 21 20 19 18 17 16 15 28 27 26 25 24 23 1 A1 A0 DQ0 A7 A4 A3 A2 A6 A5 A13 A10 A8 A9 DQ7 W A11 G E DQ5 DQ1 DQ2 DQ3 VSS DQ4 DQ6 A12 A14 VCC M48T35Y DESCRIPTION The M48T35/35Y TIMEKEEPER® RAM is a 32Kb x8 non-volatile static RAM and real time clock. The monolithic chip is available in two special packag- es to provide a highly integrated battery backed-up memory and real time clock solution. The M48T35/35Y is a non-volatile pin and function equivalent to any JEDEC standard 32Kb x8 SRAM. It also easily fits into many ROM, EPROM, and EEPROM sockets, providing the non-volatility of PROMs without any requirement for special write timing or limitations on the number of writes that can be performed. The 28 pin 600mil DIP CAPHAT houses the M48T35/35Y silicon with a quartz crystal and a long life lithium button cell in a single package. The 28 pin 330mil SOIC provides sockets with gold plated contacts at both ends for direct con- |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |