APM32F103TBU6-R datasheet(31/78 Pages) GEEHY

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5.3.3

Maximum rated current characteristics

Table14 Maximum Rated Current Characteristics

Symbol

Description

Maximum

value

Unit

IVDD

Total current through VDD/VDDA power line (supply current) (1)

150

IVSS

Total current through VSS ground line (outflow current) (1)

150

IIO

Sink current on any I/O and control pin

Source current on any I/O and control pin

-25

IINJ(PIN) (2) (3)

Injection current of NRST pin

±5

Injection current of HSECLK OSC_IN pin and LSECLK OSC_IN pin

±5

Injection current of other pins (4)

±5

ΣIINJ(PIN)(2)

Total injection current on all I/O and control pins (4)

±25

All power supply (VDD, VDDA) and ground (VSS, VSSA) must always be within the allowed range.

If VIN exceeds the maximum value, IINJ(PIN) must be externally limited not to exceed the maximum value.

When VIN> VDD, the current flows into the pins; when VIN<VSS, the current flows out of the pins.

The outflow current will interfere with the simulation performance of the ADC.

When the current is injected into several I/O ports at the same ti

me, the maximum value of ΣIINJ(PIN) is the

sum of instantaneous absolute value of inflow current and outflow current.

5.3.4

Electrostatic discharge (ESD)

The implementation method of electrostatic discharge is a positive pulse followed by a

negative pulse after an interval of one second. All pins of the sample should be measured. The

size of the sample is related to the number of power supply pins on the chip (3 x (n+1) power

supply pins). This test conforms to JS-001-2017/JS-002-2018 standard.

Table15 Electrostatic Discharge (ESD)

Symbol

Parameter

Condition

Maximum

Unit

VESD(HBM)

Electrostatic discharge voltage

(human body model)

TA= +25℃, conforming to

JS-001-2017 3A

4000

VESD(CDM)

Electrostatic discharge voltage

(charging device model)

TA= +25℃, conforming to

JS-002-2018

1000

Note: The samples are measured by a third-party testing organization and are not tested in production.

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