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APM32F103C8T6-R 数据表(PDF) 50 Page - Geehy Semiconductor Co., Ltd. |
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APM32F103C8T6-R 数据表(HTML) 50 Page - Geehy Semiconductor Co., Ltd. |
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50 / 78 page ![]() w w w. g e e h y. c o m P a g e 49 Figure 17 SPI Timing Diagram - Master Mode High NSS input MOSI output MISO input MSB IN MSB OUT BIT 6~1 IN LSB IN LSB OUT BIT 6~1 OUT CPHA=0 CPOL=0 CPHA=0 CPOL=1 CPHA=1 CPOL=0 CPHA=1 CPOL=1 tc(SCK) th(MI) tv(MO) th(MO) SCK input SCK input tW(SCKH) tW(SCKL) tSU(MI) tr(SCK) tf(SCK) Note: The measuring points are set at CMOS levels: 0.3VDD and 0.7VDD. 5.11.3 USBD peripheral characteristics Table39 USBD DC Characteristics Symbol Parameter Condition Minimum value (1) Maximum value (1) Unit Input level VDD USBD operating voltage (2) - 3.0 (3) 3.6 V VDI (4) Differential input sensitivity I (USBDP, USBDM) 0.2 - V VCM (4) Differential common mode range Including VDI range 0.8 2.5 VSE (4) Single-ended receiver threshold - 1.3 2.0 Output level VOL Static output low level 1.5kΩ RL connected to 3.6V (5) - 0.3 V VOH Static output high level 5kΩ RL connected to VSS (5) 2.8 3.6 1. All voltage measurement is subject to device-end ground wire. 2. In order to be compatible with the USB2.0 full-speed electrical specification, the USBDP (D+) pin must be connected to a voltage of 3.0~3.6V through a 1.5kΩ resistor. 3. The correct USBD function of APM32F103xx can be guaranteed at 2.7V, rather than the electrical |
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