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AS1163 数据表(PDF) 16 Page - ams-OSRAM AG |
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AS1163 数据表(HTML) 16 Page - ams-OSRAM AG |
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16 / 91 page ![]() AS1163 Electrical characteristics Datasheet • PUBLIC • Document Feedback DS001075 • v2-00 • 2025-Nov-21 16 / 91 / Symbol Parameter Conditions Min Typ Max Unit ADC_GAIN_ERR Gain variation Vf meas, referred to full- scale. Tested with VDD=5V -1.12 1.12 % ADC_DNL DNL Vf meas. Valid for Tj<125ºC -1 1 LSB ADC_INL INL Vf meas. -3 3 LSB ADC_TSAMPLE Vf meas. 1.6 µs T_acc Temperature sensor accuracy Room temp. -8 8 ºC T_AMB Ambient temperature -40 125 ºC T_J Junction temperature -40 150 ºC Rth Thermal resistance from junction to ambient temperature JEDEC 2s2p PCB 64 °C/W V_th_se_high Threshold on SIOx_x to detect communication mode (high) 2.85 VDD+0.3 V V_th_se_low Threshold on SIOx_x to detect communication mode (low) -0.3 0.7 V V_SIOx_P/N(O,L) Output low level for pin SIOx_P and SIOx_N for single- ended communication 10k Ohm load 0 0.7 V V_SIOx_P/N(O,H) Output high level for pin SIOx_P and SIOx_N for single- ended communication 10k Ohm load VDD-0.7 VDD V F_com_mcu Allowed input data rate for communication in MCU mode. Tested with VDD=5V. 2.23 2.4 2.62 Mbps DUTY_com_mcu Allowed input duty cycle in MCU mode. Tested with VDD=5V. 47.5 52.5 % F_com_can Allowed input data rate for communication in CAN RTX mode. Tested with VDD=5V. 2.31 2.4 2.55 Mbps |
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